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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thicknessLaifi, J. ; Bchetnia, A.Journal of materials science. Materials in electronics, 2022-04, Vol.33 (10), p.7587-7597 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 2 |
Material Type: Artigo
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0.3–3 GHz magneto-dielectric properties of nanostructured NiZnCo ferrite from hydrothermal processShen, Xiang ; Wang, Yanxin ; Yang, Xiang ; Lu, Liqiang ; Huang, LiangJournal of materials science. Materials in electronics, 2010-06, Vol.21 (6), p.630-634 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
| 3 |
Material Type: Artigo
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1-((4-methylpiperazin-1-yl)(phenyl)methyl)naphthalen-2-ol: A novel Mannich base organic NLO crystal for the analysis of electro-optic applicationsDennis Raj, A. ; Jeeva, M. ; Purusothaman, R. ; Venkatesa Prabhu, G. ; Vimalan, M. ; Vetha Potheher, I.Journal of materials science. Materials in electronics, 2017-06, Vol.28 (11), p.7802-7810 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 4 |
Material Type: Artigo
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1/f noise in HgCdTe photodiodesKINCH, M. A ; WAN, C.-F ; BECK, J. DJournal of electronic materials, 2005-06, Vol.34 (6), p.928-932 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 5 |
Material Type: Artigo
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1.02-μm vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wellsXIANG, N ; LEINONEN, P ; RAJALA, L ; LYYTIKÄINEN, J ; PESSA, MJournal of materials science. Materials in electronics, 2004-02, Vol.15 (2), p.115-117 [Periódico revisado por pares]Norwell, MA: SpringerTexto completo disponível |
| 6 |
Material Type: Artigo
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1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70Jonas, Charlotte ; Capell, Craig ; Burk, Al ; Zhang, Qingchun ; Callanan, Robert ; Agarwal, Anant ; Geil, Bruce ; Scozzie, CharlesJournal of electronic materials, 2008-05, Vol.37 (5), p.662-665 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
| 7 |
Material Type: Artigo
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15 for TMS 2015: Can’t-Miss Opportunities to Make the Meeting MemorableRobinson, LynneJOM (1989), 2014-12, Vol.66 (12), p.2408-2412 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
| 8 |
Material Type: Artigo
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1700°C Isothermal Phase Diagram of the MgO-Al2O3-TiO2 System in Air Related to Pseudobrookite and Spinel CeramicsQiu, Yuchao ; Shi, Junjie ; Hou, Changle ; Dong, Jingjing ; Zhai, Yumo ; Li, Kaixuan ; Yan, Sen ; Yu, Kai ; Li, Jianzhong ; Liu, ChangshengJOM (1989), 2023-06, Vol.75 (6), p.1982-1992 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 9 |
Material Type: Artigo
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1D-photonic crystals prepared from the amorphous chalcogenide filmsKohoutek, Tomas ; Orava, Jiri ; Wagner, Tomas ; Hrdlicka, Martin ; Vlcek, Milan ; Frumar, MiloslavJournal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.346-350 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
| 10 |
Material Type: Artigo
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1D porous C3N4/rGO composites with enhanced photocatalytic nitrogen fixation performanceYang, Xulan ; Liu, Huixian ; Wang, Chenglong ; Li, Xuyun ; Liang, Longjun ; Song, ZuweiJournal of materials science. Materials in electronics, 2020-11, Vol.31 (22), p.19647-19656 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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