Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDBai, J. ; Wang, T. ; Li, H.D. ; Jiang, N. ; Sakai, S.Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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(0 0 1) Textured CoPt/Ag films and nanocomposites: the effect of Ag underlayersManios, E. ; Karanasos, V. ; Niarchos, D. ; Panagiotopoulos, I.Journal of magnetism and magnetic materials, 2004-05, Vol.272, p.2169-2170 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel methodGuo, Dongyun ; Ju, Yang ; Fu, Chengju ; Huang, Zhixiong ; Zhang, LianmengMaterials science--Poland, 2016-09, Vol.34 (3), p.555-563 [Periódico revisado por pares]De GruyterTexto completo disponível |
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4 |
Material Type: Artigo
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[0 1 0] dislocations in the complex metallic alloy ξ ′-Al–Pd–MnFeuerbacher, M ; Caillard, DActa materialia, 2004-03, Vol.52 (5), p.1297-1304 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
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5 |
Material Type: Artigo
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[0001] Compression response at room temperature of single-crystal magnesiumSyed, B. ; Geng, J. ; Mishra, R.K. ; Kumar, K.S.Scripta materialia, 2012-10, Vol.67 (7-8), p.700-703 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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6 |
Material Type: Artigo
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[001]-oriented crystalline Potassium-Sodium Niobate thin film fabricated at low temperature for use in piezoelectric energy harvesterKim, Jong-Hyun ; Woo, Jong-Un ; Yee, Yeon-Jeong ; Kim, In-Su ; Shin, Ho-Sung ; Hwang, Hyun-Gyu ; Kweon, Sang Hyo ; Choi, Hyun-Ju ; Nahm, SahnApplied surface science, 2021-01, Vol.537, p.147871, Article 147871 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAMATSUBARA, Y ; SAKAI, T ; ISHIGAMI, T ; ANDO, K ; HORIUCHI, TThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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8 |
Material Type: Ata de Congresso
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0.12 micron logic process using a 248 nm step-and-scan systemBAKER, Dan ; ZHENG, Tammy ; TAKEMOTO, Cliff ; SETHI, Satyendra ; GABRIEL, Calvin ; SCOTT, GregSPIE proceedings series, 2000, p.294-304Bellingham WA: SPIETexto completo disponível |
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9 |
Material Type: Ata de Congresso
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0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masksChen, Yung-Tin ; Lin, Chia-Hui ; Lin, Hua Tai ; Hsieh, Hung-Chang ; Yu, Shinn Sheng ; Yen, AnthonySPIE 2000Texto completo disponível |
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10 |
Material Type: Ata de Congresso
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0.15 μm gate length MHEMT technology for 77GHz automotive radar applicationsJIN HEE LEE ; HYUNG SUP YOON ; JAE YEOB SHIM ; JU YEON HONG ; DONG MIN KANG ; HAE CHEON KIM ; KYUNG IK CHO ; KYUNG HO LEE ; BOO WOO KIMPiscataway NJ: IEEE 2004Texto completo disponível |