Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
![]() |
0–0 Energies Using Hybrid Schemes: Benchmarks of TD-DFT, CIS(D), ADC(2), CC2, and BSE/GW formalisms for 80 Real-Life CompoundsJacquemin, Denis ; Duchemin, Ivan ; Blase, XavierJournal of chemical theory and computation, 2015-11, Vol.11 (11), p.5340-5359 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
2 |
Material Type: Artigo
|
![]() |
0.05 MU-M (3-SIGMA) OVERLAY ACCURACY THROUGH-THE-LENS ALIGNMENT IN AN EXCIMER LASER LITHOGRAPHY SYSTEMHIGASHIKI, T ; TOJO, T ; TAKAHASHI, Y ; TABATA, M ; NISHIZAKA, T ; KUWABARA, O ; UCHIDA, N ; YOSHINO, H ; SAITO, SJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, Vol.31 (12B), p.4161-4166 [Periódico revisado por pares]MINATO-KU TOKYO: JAPAN J APPLIED PHYSICSTexto completo disponível |
3 |
Material Type: Artigo
|
![]() |
0.1 nm information limit with the CM30FEG-special TübingenLichte, Hannes ; Kessler, Peter ; Lenz, Friedrich ; Rau, Wolf-DieterUltramicroscopy, 1993, Vol.52 (3), p.575-580 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
4 |
Material Type: Ata de Congresso
|
![]() |
0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, NPiscataway NJ: IEEE 2002Texto completo disponível |
5 |
Material Type: Artigo
|
![]() |
0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line TerminationVasjanov, Aleksandr ; Barzdenas, VaidotasElectronics (Basel), 2020-01, Vol.9 (1), p.133 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
6 |
Material Type: Ata de Congresso
|
![]() |
0.18um CMOS integrated chipset for 5.8GHz DSRC systems with +10dBm output powerShin, Sangho ; Yun, Seokoh ; Cho, Sanghyun ; Kim, Jongmoon ; Kang, Minseok ; Oh, Wonkap ; Kang, Sung-Mo2008 IEEE International Symposium on Circuits and Systems, 2008, p.1958-1961IEEETexto completo disponível |
7 |
Material Type: Artigo
|
![]() |
A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOSAn, Eun-Ji ; Oh, Dong-RyeolElectronics (Basel), 2022-06, Vol.11 (11) [Periódico revisado por pares]MDPI AGTexto completo disponível |
8 |
Material Type: Artigo
|
![]() |
A 0.00426 mm[sup.2] 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural RecordingWang, Shiwei ; Yang, Xiaolin ; Wang, Chaohan ; Vilouras, Anastasios ; Lopez, Carolina MoraElectronics (Basel), 2022-11, Vol.11 (21) [Periódico revisado por pares]MDPI AGTexto completo disponível |
9 |
Material Type: Artigo
|
![]() |
A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing filmMadhaiyan, Govindasamy ; Chen, Chao-Hsuan ; Wu, Yi-Chu ; Horng, Sheng-Fu ; Zan, Hsiao-Wen ; Meng, Hsin-Fei ; Lin, Hong-CheuJournal of materials chemistry. C, Materials for optical and electronic devices, 2019-05, Vol.7 (21), p.644-6447 [Periódico revisado por pares]Cambridge: Royal Society of ChemistryTexto completo disponível |
10 |
Material Type: Artigo
|
![]() |
A 0.055 mm2 Total Area Triple-Loop Wideband Fractional-N All-Digital Phase-Locked Loop Architecture for 1.9–6.1 GHz Frequency TuningKang, Byeongseok ; Kim, Youngsik ; Son, Hyunwoo ; Kim, ShinwoongElectronics (Basel), 2024-07, Vol.13 (13), p.2638 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |