Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditionsROY, Tania ; PUZYREV, Yevgeniy S ; EN XIA ZHANG ; DASGUPTA, Sandeepan ; FRANCIS, Sarah A ; FLEETWOOD, Daniel M ; SCHRIMPF, Ronald D ; MISHRA, Umesh K ; SPECK, James S ; PANTELIDES, Sokrates TMicroelectronics and reliability, 2011-02, Vol.51 (2), p.212-216 [Periódico revisado por pares]Kidlington: ElsevierTexto completo disponível |
2 |
Material Type: Artigo
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1-Norm character of phase shifting interferograms and its application in phase shift extractionDeng, Jian ; Zhong, Liyun ; Wang, Hanlin ; Wang, Hankun ; Zhang, Wangpin ; Zhang, Fengjie ; Ma, Shuzhen ; Lu, XiaoxuOptics communications, 2014-04, Vol.316, p.156-160 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
3 |
Material Type: Artigo
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10-100 TeV cosmic ray anisotropy measured at the Baksan EAS “Carpet” arrayAlekseenko, V.V. ; Cherniaev, A.B. ; Djappuev, D.D. ; Kudjaev, A.U. ; Michailova, O.I. ; Stenkin, Yu.V. ; Stepanov, V.I. ; Volchenko, V.I.Nuclear physics. Section B, Proceedings supplement, 2009-12, Vol.196, p.179-182Elsevier B.VTexto completo disponível |
4 |
Material Type: Artigo
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10-kV diffractive imaging using newly developed electron diffraction microscopeKamimura, Osamu ; Dobashi, Takashi ; Kawahara, Kota ; Abe, Takashi ; Gohara, KazutoshiUltramicroscopy, 2010, Vol.110 (2), p.130-133 [Periódico revisado por pares]Netherlands: Elsevier B.VTexto completo disponível |
5 |
Material Type: Artigo
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100-kV advanced nanoelectron-beam exposure system for 8,12 ″ wafers and x-ray masksOchiai, Yukinori ; Ogura, Takashi ; Mogami, TohruMicroelectronic engineering, 1999-05, Vol.46 (1), p.187-190 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
6 |
Material Type: Artigo
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1024 × 1024 Format pixel co-located simultaneously readable dual-band QWIP focal planeGunapala, S.D. ; Bandara, S.V. ; Liu, J.K. ; Mumolo, J.M. ; Ting, D.Z. ; Hill, C.J. ; Nguyen, J. ; Simolon, B. ; Woolaway, J. ; Wang, S.C. ; Li, W. ; LeVan, P.D. ; Tidrow, M.Z.Infrared physics & technology, 2009-11, Vol.52 (6), p.395-398 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
7 |
Material Type: Artigo
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10nm lines and spaces written in HSQ, using electron beam lithographyGrigorescu, A.E. ; van der Krogt, M.C. ; Hagen, C.W. ; Kruit, P.Microelectronic engineering, 2007-05, Vol.84 (5-8), p.822-824 [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Artigo
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1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAsEl Kazzi, M. ; Webb, D.J. ; Czornomaz, L. ; Rossel, C. ; Gerl, C. ; Richter, M. ; Sousa, M. ; Caimi, D. ; Siegwart, H. ; Fompeyrine, J. ; Marchiori, C.Microelectronic engineering, 2011-07, Vol.88 (7), p.1066-1069 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
9 |
Material Type: Artigo
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1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer depositionWANG, X. D ; NIU, Z. C ; FENG, S. L ; MIAO, Z. HJournal of crystal growth, 2000-11, Vol.220 (1-2), p.16-22 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
10 |
Material Type: Artigo
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1.5 Watt passively Q-switched diode-pumped cw Nd:YAG laserAgnesi, A ; Dell'Acqua, S ; Reali, G.COptics communications, 1997, Vol.133 (1), p.211-215 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |