Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0, ±1) ideal matricesNOBILI, P ; SASSANO, AMathematical programming, 1998-02, Vol.80 (3), p.265-281 [Periódico revisado por pares]Heidelberg: SpringerTexto completo disponível |
2 |
Material Type: magazinearticle
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0-1400M Win 10 years: in typical Dubai fashion, the UAE seems to be developing the world's fastest nuclear programme. Driven by energy demand expected to double by 2020 to 40GW, the UAE is on track to generate nuclear power by 2017Nuclear engineering international, 2010-04, Vol.55 (669), p.27NS Media Group LimitedTexto completo disponível |
3 |
Material Type: magazinearticle
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0.027-in.-thick touchpad sensor combines pen input with mouse functionsMaliniak, LisaElectronic design, 1998-03, Vol.46 (6), p.61Nashville: Endeavor Business MediaTexto completo disponível |
4 |
Material Type: magazinearticle
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0.08-(mu m) design rules open doors to greater speed levelsAjluni, CherylElectronic design, 1998-05, Vol.46 (11), p.27Nashville: Endeavor Business MediaTexto completo disponível |
5 |
Material Type: Artigo
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0.1-1 kilogramNature (London), 2008-06, Vol.453 (7199), p.1155 [Periódico revisado por pares]Nature Publishing GroupTexto completo disponível |
6 |
Material Type: Artigo
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0.1-6.0GHz Gain BlocksWireless Design & Development, 2004-04, Vol.12 (4), p.80Rockaway: Advantage Business MediaTexto completo disponível |
7 |
Material Type: magazinearticle
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0.1-mm electrostatic microrelays switch at up to 100 GHzVollmer, AlfredElectronic design, 1997-12, Vol.45 (27), p.34Nashville: Endeavor Business MediaTexto completo disponível |
8 |
Material Type: Artigo
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0.13 micro m for 70nm partsElectronic engineering times, 2001-04, p.2London: AspenCoreTexto completo disponível |
9 |
Material Type: Artigo
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0.13-micron design rule from 193nm resist reportedElectronic News, 1997-04, Vol.43 (2164), p.83New York: Reed Business Information, a division of Reed Elsevier, IncTexto completo disponível |
10 |
Material Type: Artigo
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0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line TerminationVasjanov, Aleksandr ; Barzdenas, VaidotasElectronics (Basel), 2020-01, Vol.9 (1), p.133 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |