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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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| 1 |
Material Type: Article
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0–1 ILP-based run-time hierarchical energy optimization for heterogeneous cluster-based multi/many-core systemsYang, Simei ; Le Nours, Sébastien ; Mendez Real, Maria ; Pillement, SébastienJournal of systems architecture, 2021-06, Vol.116, p.102035, Article 102035 [Peer Reviewed Journal]Elsevier B.VFull text available |
| 2 |
Material Type: Article
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0D/2D NiS2/V-MXene composite for electrocatalytic H2 evolutionKuang, Panyong ; He, Min ; Zhu, Bicheng ; Yu, Jiaguo ; Fan, Ke ; Jaroniec, MietekJournal of catalysis, 2019-07, Vol.375, p.8-20 [Peer Reviewed Journal]Elsevier IncFull text available |
| 3 |
Material Type: Article
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1-V quasi constant-g input/output rail-to-rail CMOS op-ampCarrillo, Juan M. ; Duque-Carrillo, J.Francisco ; Torelli, Guido ; Ausı́n, José L.Integration (Amsterdam), 2003-11, Vol.36 (4), p.161-174 [Peer Reviewed Journal]Full text available |
| 4 |
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1.672 Gigabits/s FPGA based Viterbi decoder for 4D 8PSK TCMRahman, A.T.M. Anishur ; Cowley, W.G.Digital signal processing, 2010, Vol.20 (1), p.263-268 [Peer Reviewed Journal]Elsevier IncFull text available |
| 5 |
Material Type: Article
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A 0.004% resolution & SAT<1.8 μson-chip adaptive anti-aging system using cuckoo intelligence-based algorithm in 65 nm CMOSZhang, Yuejun ; Zhang, Haiming ; Wang, Pengjun ; Wu, Qiufeng ; Li, GangIntegration (Amsterdam), 2021-05, Vol.78, p.135-143 [Peer Reviewed Journal]Amsterdam: Elsevier B.VFull text available |
| 6 |
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A 0.2-V 1.2 nW 1-KS/s SAR ADC with a novel comparator structure for biomedical applicationsVafaei, M. ; Hosseini, M.R. ; Abiri, E. ; Salehi, M.R.Integration (Amsterdam), 2023-01, Vol.88, p.362-370 [Peer Reviewed Journal]Elsevier B.VFull text available |
| 7 |
Material Type: Article
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A 0.33 V 2.5 µW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOSJin, Wei ; He, Weifeng ; Jiang, Jianfei ; Huang, Haichao ; Zhao, Xuejun ; Sun, Yanan ; Chen, Xin ; Jing, NaifengIntegration (Amsterdam), 2017-06, Vol.58, p.27 [Peer Reviewed Journal]Amsterdam: Elsevier BVFull text available |
| 8 |
Material Type: Article
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A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOSJin, Wei ; He, Weifeng ; Jiang, Jianfei ; Huang, Haichao ; Zhao, Xuejun ; Sun, Yanan ; Chen, Xin ; Jing, NaifengIntegration (Amsterdam), 2017-06, Vol.58, p.27-34 [Peer Reviewed Journal]Full text available |
| 9 |
Material Type: Article
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A 0.6in CRT as a miniature display deviceOki, Kyoichi ; Ozawa, LyujiDisplays, 1995, Vol.16 (2), p.59-67 [Peer Reviewed Journal]Elsevier B.VFull text available |
| 10 |
Material Type: Article
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A 0.6V 1.07 μW/Channel neural interface IC using level-shifted feedbackLyu, Liangjian ; Wang, Yu ; Chen, Chixiao ; Richard Shi, C.-J.Integration (Amsterdam), 2020-01, Vol.70, p.51-59 [Peer Reviewed Journal]Amsterdam: Elsevier B.VFull text available |
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