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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications
0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications
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Acta de Congreso 		Añadir a Mi Portal

0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications

YANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, N

Piscataway NJ: IEEE 2002

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2
0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination
0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination
Material Type:
Artículo 		Añadir a Mi Portal

0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination

Vasjanov, Aleksandr ; Barzdenas, Vaidotas

Electronics (Basel), 2020-01, Vol.9 (1), p.133 [Revista revisada por pares]

Basel: MDPI AG

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3
0.18um CMOS integrated chipset for 5.8GHz DSRC systems with +10dBm output power
0.18um CMOS integrated chipset for 5.8GHz DSRC systems with +10dBm output power
Material Type:
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0.18um CMOS integrated chipset for 5.8GHz DSRC systems with +10dBm output power

Shin, Sangho ; Yun, Seokoh ; Cho, Sanghyun ; Kim, Jongmoon ; Kang, Minseok ; Oh, Wonkap ; Kang, Sung-Mo

2008 IEEE International Symposium on Circuits and Systems, 2008, p.1958-1961

IEEE

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4
0.5T0.5R-An Ultracompact RRAM Cell Uniquely Enabled by van der Waals Heterostructures
0.5T0.5R-An Ultracompact RRAM Cell Uniquely Enabled by van der Waals Heterostructures
Material Type:
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0.5T0.5R-An Ultracompact RRAM Cell Uniquely Enabled by van der Waals Heterostructures

Zhang, Dujiao ; Yeh, Chao-Hui ; Cao, Wei ; Banerjee, Kaustav

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2033-2040 [Revista revisada por pares]

New York: IEEE

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5
1-100GHz microwave photonics link technologies for next-generation WiFi and 5G wireless communications
1-100GHz microwave photonics link technologies for next-generation WiFi and 5G wireless communications
Material Type:
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1-100GHz microwave photonics link technologies for next-generation WiFi and 5G wireless communications

Gee-Kung Chang ; Cheng Liu

2013 IEEE International Topical Meeting on Microwave Photonics (MWP), 2013, p.5-8

IEEE

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6
1.25-Gb/s Transmission Over an Access Network Link With Tunable OADM and a Reflective SOA
1.25-Gb/s Transmission Over an Access Network Link With Tunable OADM and a Reflective SOA
Material Type:
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1.25-Gb/s Transmission Over an Access Network Link With Tunable OADM and a Reflective SOA

Urban, P.J. ; Pluk, E. ; de Laat, M.M. ; Huijskens, F.M. ; Khoe, G.D. ; Koonen, A. ; de Waardt, H.

IEEE photonics technology letters, 2009-03, Vol.21 (6), p.380-382

New York: IEEE

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7
1.25 volt, low cost, embedded flash memory for low density applications
1.25 volt, low cost, embedded flash memory for low density applications
Material Type:
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1.25 volt, low cost, embedded flash memory for low density applications

McPartland, R.J. ; Singh, R.

2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103), 2000, p.158-161

IEEE

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8
A 0.18-μm CMOS clock and data recovery circuit with reference-less dual loops
A 0.18-μm CMOS clock and data recovery circuit with reference-less dual loops
Material Type:
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A 0.18-μm CMOS clock and data recovery circuit with reference-less dual loops

Miao Li ; Kwasniewski, Tad ; Shoujun Wang

2008 IEEE International Symposium on Circuits and Systems (ISCAS), 2008, p.2358-2361

IEEE

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9
A 0.18μm SOI BCD technology for automotive application
A 0.18μm SOI BCD technology for automotive application
Material Type:
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A 0.18μm SOI BCD technology for automotive application

Hao, Y. ; Sim, P. C. ; Toner, B. ; Frank, M. ; Ackermann, M. ; Tan, A. ; Kuniss, U. ; Kho, E. ; Doblaski, J. ; Hee, E. G. ; Liew, M. ; Hoelke, A. ; Wada, S. ; Oshima, T.

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.177-180

IEEE

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10
A 0.3 V PNN Based 10T SRAM with Pulse Control Based Read-Assist and Write Data-Aware Schemes for Low Power Applications
A 0.3 V PNN Based 10T SRAM with Pulse Control Based Read-Assist and Write Data-Aware Schemes for Low Power Applications
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A 0.3 V PNN Based 10T SRAM with Pulse Control Based Read-Assist and Write Data-Aware Schemes for Low Power Applications

Sheu, Ming-Hwa ; Tsai, Chang-Ming ; Tsai, Ming-Yan ; Hsia, Shih-Chang ; Morsalin, S. M. Salahuddin ; Lin, Jin-Fa

Sensors (Basel, Switzerland), 2021-10, Vol.21 (19), p.6591 [Revista revisada por pares]

Basel: MDPI AG

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