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"On-glass" process option for BiCMOS technology
"On-glass" process option for BiCMOS technology
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Ata de Congresso 		Adicionar ao Meu Espaço

"On-glass" process option for BiCMOS technology

Aksen, E. ; van Noort, W.D. ; Bower, D. ; Bell, N. ; Dekker, R. ; de Boer, W. ; Rodriguez, A. ; Deixler, P. ; Havens, R.J. ; Magnee, P.H.C.

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting, 2004, p.64-67

Piscataway NJ: IEEE

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2
Metal emitter SiGe:C HBTs
Metal emitter SiGe:C HBTs
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Metal emitter SiGe:C HBTs

Donkers, J.J.T.M. ; Vanhoucke, T. ; Agarwal, P. ; Hueting, R.J.E. ; Meunier-Beillard, P. ; Vijayaraghavan, M.N. ; Magnee, P.H.C. ; Verheijen, M.A. ; de Kort, R. ; Slotboom, J.W.

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.243-246

Piscataway NJ: IEEE

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3
Analysis of superconducting Sn/Ti contacts to GaAs/AlGaAs heterostructures by electron focusing
Analysis of superconducting Sn/Ti contacts to GaAs/AlGaAs heterostructures by electron focusing
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Analysis of superconducting Sn/Ti contacts to GaAs/AlGaAs heterostructures by electron focusing

Gao, J R ; Kerkhof, J J B ; Verwerft, M ; Magnée, P ; Wees, B J van ; Klapwijk, T M ; Hosson, J Th M De

Semiconductor science and technology, 1996-04, Vol.11 (4), p.L621-624 [Periódico revisado por pares]

Bristol: IOP Publishing

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4
Fast noise prediction for process optimization using only standard DC and S-parameter measurements
Fast noise prediction for process optimization using only standard DC and S-parameter measurements
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Fast noise prediction for process optimization using only standard DC and S-parameter measurements

Gridelet, E. ; Scholten, A. J. ; Klaassen, D. B. M. ; van Dalen, R. ; Pijper, R. ; Magnee, P. H. C. ; Tiemeijer, L. F. ; Dinh, V. T. ; Vanhoucke, T.

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-4

IEEE

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5
A new trench bipolar transistor for RF applications
A new trench bipolar transistor for RF applications
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A new trench bipolar transistor for RF applications

Hueting, R.J.E. ; Slotboom, J.W. ; Melai, J. ; Agarwal, P. ; Magnee, P.H.C.

IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1108-1113 [Periódico revisado por pares]

New York: IEEE

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6
SiGe:C profile optimization for low noise performance
SiGe:C profile optimization for low noise performance
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SiGe:C profile optimization for low noise performance

Magnee, P. H. C. ; van Dalen, R. ; Mertens, H. ; Vanhoucke, T. ; van Velzen, B. ; Huiskamp, P. ; Brunets, I. ; Donkers, J. J. T. M. ; Klaassen, D. B. M.

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2011, p.166-169

IEEE

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7
Ultra shallow boron base profile with carbon implantation
Ultra shallow boron base profile with carbon implantation
Material Type:
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Ultra shallow boron base profile with carbon implantation

Magnee, P.H.C. ; Kemmeren, A.L.A.M. ; Cowern, N.E.B. ; Slotboom, J.W. ; Havens, R.J. ; Huizing, H.G.A.

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001, p.64-67

IEEE

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8
Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors
Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors
Material Type:
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Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors

Magnee, P.H.C. ; Van Rijs, F. ; Dekker, R. ; Hartskeerl, D.M.H. ; Kemmeren, A.L.A.M. ; Koster, R. ; Huizing, H.G.A.

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.199-202

IEEE

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9
A new sub-micron 24 V SiGe:C resurf HBT
A new sub-micron 24 V SiGe:C resurf HBT
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A new sub-micron 24 V SiGe:C resurf HBT

MELAI, J ; MAGNEE, P. H. C ; HUETING, R. J. E ; NEUILLY, F. I ; DE KORT, R ; SLOTBOOM, J. W

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, 2004, p.33-36

Tokyo: IEEE

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10
Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflow
Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflow
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Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflow

Mertens, H. ; Magnee, P. H. C. ; Donkers, J. J. T. M. ; van Dalen, R. ; Brunets, I. ; Van Huylenbroeck, S. ; Vleugels, F. ; Vanhoucke, T.

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-4

IEEE

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