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Material Type: Artigo
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Analysis of superconducting Sn/Ti contacts to GaAs/AlGaAs heterostructures by electron focusingGao, J R ; Kerkhof, J J B ; Verwerft, M ; Magnée, P ; Wees, B J van ; Klapwijk, T M ; Hosson, J Th M DeSemiconductor science and technology, 1996-04, Vol.11 (4), p.L621-624 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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Material Type: Ata de Congresso
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Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistorsMagnee, P.H.C. ; Van Rijs, F. ; Dekker, R. ; Hartskeerl, D.M.H. ; Kemmeren, A.L.A.M. ; Koster, R. ; Huizing, H.G.A.Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.199-202IEEETexto completo disponível |
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Material Type: Ata de Congresso
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Influence of output impedance on power added efficiency of Si-bipolar power transistorsvan Rijs, F. ; Dekker, R. ; Visser, H.A. ; Huizing, H.G.A. ; Hartskeerl, D. ; Magnee, P.H.C. ; Dondero, R.2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.3, p.1945-1948 vol.3IEEETexto completo disponível |
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Material Type: Ata de Congresso
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Ultra shallow boron base profile with carbon implantationMagnee, P.H.C. ; Kemmeren, A.L.A.M. ; Cowern, N.E.B. ; Slotboom, J.W. ; Havens, R.J. ; Huizing, H.G.A.Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001, p.64-67IEEETexto completo disponível |
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Material Type: Ata de Congresso
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"On-glass" process option for BiCMOS technologyAksen, E. ; van Noort, W.D. ; Bower, D. ; Bell, N. ; Dekker, R. ; de Boer, W. ; Rodriguez, A. ; Deixler, P. ; Havens, R.J. ; Magnee, P.H.C.Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting, 2004, p.64-67Piscataway NJ: IEEETexto completo disponível |
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Material Type: Ata de Congresso
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Metal emitter SiGe:C HBTsDonkers, J.J.T.M. ; Vanhoucke, T. ; Agarwal, P. ; Hueting, R.J.E. ; Meunier-Beillard, P. ; Vijayaraghavan, M.N. ; Magnee, P.H.C. ; Verheijen, M.A. ; de Kort, R. ; Slotboom, J.W.IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.243-246Piscataway NJ: IEEETexto completo disponível |
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Material Type: Ata de Congresso
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A new sub-micron 24 V SiGe:C resurf HBTMELAI, J ; MAGNEE, P. H. C ; HUETING, R. J. E ; NEUILLY, F. I ; DE KORT, R ; SLOTBOOM, J. W2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, 2004, p.33-36Tokyo: IEEETexto completo disponível |
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Material Type: Artigo
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A new trench bipolar transistor for RF applicationsHueting, R.J.E. ; Slotboom, J.W. ; Melai, J. ; Agarwal, P. ; Magnee, P.H.C.IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1108-1113 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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11-Megapixel CMOS-Integrated SiGe Micromirror Arrays for High-End ApplicationsWitvrouw, A. ; Haspeslagh, L. ; Pedreira, O.V. ; De Coster, J. ; De Wolf, I. ; Tilmans, H.A.C. ; Bearda, T. ; Schlatmann, B. ; van Bommel, M. ; de Nooijer, M.-C. ; Magnee, P.H.C. ; Lous, E.J. ; Hagting, M. ; Lauria, J. ; Vanneer, R. ; van Drieenhuizen, B.Journal of microelectromechanical systems, 2010-02, Vol.19 (1), p.202-214 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Ata de Congresso
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Layout and spacer optimization for high-frequency low-noise performance in HBT'sVanhoucke, T ; Donkers, J J T M ; Hurkx, G A M ; Magnee, P H C ; van Dalen, R ; Egbers, J H ; Klaassen, D B M2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, p.53-56IEEETexto completo disponível |