Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Color in "tungsten trioxide" thin filmsGerard, P. ; Deneuville, A. ; Hollinger, G. ; Duc, Tran MinhJournal of applied physics, 1977-10, Vol.48 (10), p.4252-4255 [Periódico revisado por pares]United StatesTexto completo disponível |
2 |
Material Type: Artigo
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Intrinsic stress in thin films deposited on anisotropic substrates and its influence on the natural frequencies of piezoelectric resonatorsTiersten, H. F. ; Sinha, B. K. ; Meeker, T. R.Journal of applied physics, 1981-01, Vol.52 (9), p.5614-5624 [Periódico revisado por pares]Texto completo disponível |
3 |
Material Type: Artigo
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The measurement of elastic stresses and energy in cubic single-crystal films by x-ray diffractionRao, Satish I. ; Houska, C. R.Journal of applied physics, 1981-01, Vol.52 (10), p.6322-6327 [Periódico revisado por pares]Texto completo disponível |
4 |
Material Type: Artigo
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Simple estimate of electromigration failure in metallic thin filmsMogro-Campero, AJournal of applied physics, 1982-02, Vol.53 (2), p.1224-1225 [Periódico revisado por pares]Texto completo disponível |
5 |
Material Type: Artigo
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A flux analysis of the current–voltage characteristics of thin film frontwall illuminated and backwall illuminated liquid junction and metal junction solar cellsHinckley, S. ; McCann, J. F. ; Haneman, D.Journal of applied physics, 1983-04, Vol.54 (4), p.1955-1965 [Periódico revisado por pares]Texto completo disponível |
6 |
Material Type: Artigo
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Properties of tin doped indium oxide thin films prepared by magnetron sputteringRAY, S ; RATNABALI BANERJEE ; BASU, N ; BATABYAL, A. K ; BARUA, A. KJournal of applied physics, 1983-06, Vol.54 (6), p.3497-3501 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized siliconSah, Chih-Tang ; Sun, Jack Yuan-Chen ; Tzou, Joseph Jeng-TaoJournal of applied physics, 1983-08, Vol.54 (8), p.4378-4381 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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Thermal stability of electrically active dopants in laser annealed silicon filmsWILSON, S. R ; PAULSON, W. M ; GREGORY, R. B ; TAM, G ; WHITE, C. W ; APPLETON, B. R ; RAI, A. K ; PRONKO, P. PJournal of applied physics, 1983-09, Vol.54 (9), p.5004-5013 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
9 |
Material Type: Artigo
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Modeling of thin film solar cells: uniform field approximationCRANDALL, R. SJournal of applied physics, 1983-12, Vol.54 (12), p.7176-7186 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Electron tunneling in heavily In-doped polycrystalline CdS filmsGARCIA-CUENCA, M. V ; MORENZA, J. L ; ESTEVE, JJournal of applied physics, 1984-01, Vol.56 (6), p.1738-1743 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |