Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.1-Micrometer scaling by 1:1 synchrotron radiation lithographyMochiji, K ; Ogawa, T ; Oizumil, H ; Soga, TMicroelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Periódico revisado por pares]AMSTERDAM: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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0.1 μ scale lithography using a conventional electron beam systemDix, C. ; Flavin, P. G. ; Hendy, P. ; Jones, M. E.Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1985-01, Vol.3 (1), p.131-135Sem texto completo |
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3 |
Material Type: Artigo
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0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metalTanabe, M. ; Matsuno, T. ; Kashiwagi, N. ; Sakai, H. ; Inoue, K. ; Tamura, A.Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996-09, Vol.14 (5), p.3248-3251Sem texto completo |
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4 |
Material Type: Artigo
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0.1 μm x‐ray mask replicationGentili, M. ; Kumar, R. ; Luciani, L. ; Grella, L. ; Plumb, D. ; Leonard, Q.Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991-11, Vol.9 (6), p.3319-3323 [Periódico revisado por pares]Sem texto completo |
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5 |
Material Type: Artigo
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0.12 μm optical lithography performances using an alternating DUV phase shift maskTrouiller, Y. ; Buffet, N. ; Mourier, T. ; Schiavone, P. ; Quere, Y.Microelectronic engineering, 1998-03, Vol.41, p.61-64 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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0.18 μm KrF lithography using optical proximity correction based on empirical behavior modelingTritchkov, Alexander ; Stirniman, John ; Gangala, Hareen ; Ronse, KurtJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998-11, Vol.16 (6), p.3398-3404, Article 3398Sem texto completo |
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7 |
Material Type: Artigo
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0.279 nW fourth-order filter circuit for biological signal conditioningThakur, Diksha ; Sharma, KulbhushanAIP advances, 2024-06, Vol.14 (6), p.065110-065110-13 [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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0.3 μm contact layer: process characterisationRomeo, C. ; Canali, F. ; Riva, L.Microelectronic engineering, 1999, Vol.46 (1), p.89-92 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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0.35 μm pattern fabrication using quartz-etch attenuate phase-shifting mask in an I-line stepper with a 0.50 NA and a 0.60 sigmaLoong, Wen-an ; Shy, Shyi-long ; Lin, Yung-chiMicroelectronic engineering, 1995-02, Vol.27 (1), p.275-278 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Ata de Congresso
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0.35 μm rule device pattern fabrication using high absorption‐type novolac photoresist in single layer deep ultraviolet lithography: Surface image transfer for contact hole fabricationTomo, Y. ; Kasuga, T. ; Saito, M. ; Someya, A. ; Tsumori, T.Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992, Vol.10 (6), p.2576-2580WOODBURY: Amer Inst PhysicsSem texto completo |