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1
Aluminum-induced crystallization of amorphous silicon films deposited by hot wire chemical vapor deposition on glass substrates
Aluminum-induced crystallization of amorphous silicon films deposited by hot wire chemical vapor deposition on glass substrates
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Aluminum-induced crystallization of amorphous silicon films deposited by hot wire chemical vapor deposition on glass substrates

Ebil, Ozgenc ; Aparicio, Roger ; Birkmire, Robert

Thin solid films, 2010-10, Vol.519 (1), p.178-183 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Characterization of 4H-SiC grown on AlN/Si(100) by CVD
Characterization of 4H-SiC grown on AlN/Si(100) by CVD
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Characterization of 4H-SiC grown on AlN/Si(100) by CVD

Qin, Z. ; Han, P. ; Han, T.T. ; Yan, B. ; Jiang, N. ; Xu, S. ; Shi, J. ; Zhu, J. ; Xie, Z.L. ; Xiu, X.Q. ; Gu, S.L. ; Zhang, R. ; Zheng, Y.D.

Thin solid films, 2006-10, Vol.515 (2), p.580-582 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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3
Characterization of mixed zinc-oxidized zinc thin films deposited by a cold remote nitrogen plasma
Characterization of mixed zinc-oxidized zinc thin films deposited by a cold remote nitrogen plasma
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Characterization of mixed zinc-oxidized zinc thin films deposited by a cold remote nitrogen plasma

Mutel, B. ; Taleb, A.Ben ; Dessaux, O. ; Goudmand, P. ; Gengembre, L. ; Grimblot, J.

Thin solid films, 1995-10, Vol.266 (2), p.119-128 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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4
Conformal aluminum oxide coating of high aspect ratio structures using metalorganic chemical vapor deposition
Conformal aluminum oxide coating of high aspect ratio structures using metalorganic chemical vapor deposition
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Conformal aluminum oxide coating of high aspect ratio structures using metalorganic chemical vapor deposition

Wiest, F. ; Capodieci, V. ; Blank, O. ; Gutsche, M. ; Schulze, J. ; Eisele, I. ; Matusche, J. ; Schmidt, U.I.

Thin solid films, 2006-02, Vol.496 (2), p.240-246 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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5
Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition
Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition
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Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition

Wu, Bing-Rui ; Lo, Shih-Yung ; Wuu, Dong-Sing ; Ou, Sin-Liang ; Mao, Hsin-Yuan ; Wang, Jui-Hao ; Horng, Ray-Hua

Thin solid films, 2012-07, Vol.520 (18), p.5860-5866 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cells
Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cells
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Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cells

Wang, T.H. ; Iwaniczko, E. ; Page, M.R. ; Levi, D.H. ; Yan, Y. ; Branz, H.M. ; Wang, Q.

Thin solid films, 2006-04, Vol.501 (1), p.284-287 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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7
Effect of liquid level and laser power on the formation of spherical alumina nanoparticles by nanosecond laser ablation of alumina target
Effect of liquid level and laser power on the formation of spherical alumina nanoparticles by nanosecond laser ablation of alumina target
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Effect of liquid level and laser power on the formation of spherical alumina nanoparticles by nanosecond laser ablation of alumina target

Al-Mamun, Sharif Abdullah ; Nakajima, Reiko ; Ishigaki, Takamasa

Thin solid films, 2012-11, Vol.523, p.46-51 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing
Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing
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Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

Takimoto, Takuma ; Takeshita, Koji ; Nakamura, Seiji ; Okumura, Tsugunori

Thin solid films, 2014-04, Vol.557, p.212-215 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Enhancement of the c-axis texture of aluminum nitride by an inductively coupled plasma reactive sputtering process
Enhancement of the c-axis texture of aluminum nitride by an inductively coupled plasma reactive sputtering process
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Enhancement of the c-axis texture of aluminum nitride by an inductively coupled plasma reactive sputtering process

Yeh, C.-M. ; Chen, C.H. ; Gan, J.-Y. ; Kou, C.S. ; Hwang, J.

Thin solid films, 2005-07, Vol.483 (1), p.6-9 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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10
Epitaxial growth of non-polar a-plane AlN films by low temperature sputtering using ZnO buffer layers
Epitaxial growth of non-polar a-plane AlN films by low temperature sputtering using ZnO buffer layers
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Epitaxial growth of non-polar a-plane AlN films by low temperature sputtering using ZnO buffer layers

Chen, Hou-Guang ; Jian, Sheng-Rui ; Kao, Hui-Ling ; Chen, Meei-Ru ; Huang, Gou-Zhi

Thin solid films, 2011-05, Vol.519 (15), p.5090-5094 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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