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1
On the structural properties of a-'SI IND.1-X' 'c ind.X h' thin films
On the structural properties of a-'SI IND.1-X' 'c ind.X h' thin films
Material Type:
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On the structural properties of a-'SI IND.1-X' 'c ind.X h' thin films

Valmor Roberto Mastelaro A M Flank; Márcia Carvalho de Abreu Fantini; Diomar da Rocha Santos Bittencourt; Marcelo Nelson Páez Carreño 1962-; Inés Pereyra 1947-

New York v.79, n.3 , p.1324-9, 1996 Journal of Applied Physics

New York 1996

Item não circula. Consulte sua biblioteca.(Acessar)

2
On the structural properties of a-'SI IND.1-X' 'c ind.X h' thin films
On the structural properties of a-'SI IND.1-X' 'c ind.X h' thin films
Material Type:
Artigo 		Adicionar ao Meu Espaço

On the structural properties of a-'SI IND.1-X' 'c ind.X h' thin films

Valmor Roberto Mastelaro A M Flank; Márcia Carvalho de Abreu Fantini; Diomar da Rocha Santos Bittencourt; Marcelo Nelson Páez Carreño 1962-; Inés Pereyra 1947-

New York v.79, n.3 , p.1324-9, 1996 Journal of Applied Physics

New York 1996

Item não circula. Consulte sua biblioteca.(Acessar)

3
Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x' H thin films
Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x' H thin films
Material Type:
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Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x' H thin films

Inés Pereyra 1947- Marcelo Nelson Páez Carreño 1962-; Manfredo Harri Tabacniks; Rogerio Junqueira Prado; Márcia Carvalho de Abreu Fantini

Journal of Applied Physics v. 84, n. 5, p. 2371-2379, 1998

1998

Item não circula. Consulte sua biblioteca.(Acessar)

4
Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x' H thin films
Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x' H thin films
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x' H thin films

Inés Pereyra 1947- Marcelo Nelson Páez Carreño 1962-; Manfredo Harri Tabacniks; Rogerio Junqueira Prado; Márcia Carvalho de Abreu Fantini

Journal of Applied Physics v. 84, n. 5, p. 2371-2379, 1998

1998

Item não circula. Consulte sua biblioteca.(Acessar)

5
Optical and structural properties of laser annealed Er-doped amorphous silicon thin films
Optical and structural properties of laser annealed Er-doped amorphous silicon thin films
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Optical and structural properties of laser annealed Er-doped amorphous silicon thin films

Maria José Valenzuela Bell Luiz Antônio de Oliveira Nunes; Antonio Ricardo Zanatta

Journal of Applied Physics Colleg Park v.86, n.1, p.701-703, 1999

Colleg Park 1999

Localização: IFSC - Inst. Física de São Carlos    (PROD006075 )(Acessar)

6
Optical and structural properties of laser annealed Er-doped amorphous silicon thin films
Optical and structural properties of laser annealed Er-doped amorphous silicon thin films
Material Type:
Artigo 		Adicionar ao Meu Espaço

Optical and structural properties of laser annealed Er-doped amorphous silicon thin films

Maria José Valenzuela Bell Luiz Antônio de Oliveira Nunes; Antonio Ricardo Zanatta

Journal of Applied Physics Colleg Park v.86, n.1, p.701-703, 1999

Colleg Park 1999

Localização: IFSC - Inst. Física de São Carlos    (PROD006075 )(Acessar)

7
Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition
Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition
Material Type:
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Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition

Masao Matsuoka 1949- Sadao Isotani; Jose Fernando Diniz Chubaci; S Miyake; Y Setsuhara; K Ogata; N Kuratani

Journal of Applied Physics Woodbury v. 88, n. 6, p. 3773-3775, 2000

Woodbury 2000

Acesso online

8
Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition
Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition

Masao Matsuoka 1949- Sadao Isotani; Jose Fernando Diniz Chubaci; S Miyake; Y Setsuhara; K Ogata; N Kuratani

Journal of Applied Physics Woodbury v. 88, n. 6, p. 3773-3775, 2000

Woodbury 2000

Acesso online

9
Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]
Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]
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Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]

Antonio Ricardo Zanatta C T M Ribeiro; F Alvarez

Journal of Applied Physics New York v.92, n.10, p.6349-6350, Nov,2002

New York 2002

Localização: IFSC - Inst. Física de São Carlos    (PROD008296 )(Acessar)

10
Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]
Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]
Material Type:
Artigo 		Adicionar ao Meu Espaço

Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]

Antonio Ricardo Zanatta C T M Ribeiro; F Alvarez

Journal of Applied Physics New York v.92, n.10, p.6349-6350, Nov,2002

New York 2002

Localização: IFSC - Inst. Física de São Carlos    (PROD008296 )(Acessar)

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Deste Autor:

  1. Zanatta, A
  2. Ferri, F
  3. Chambouleyron, I
  4. Fantini, M
  5. Pereyra, I

Neste Assunto:

  1. Filmes Finos
  2. Física
  3. Semicondutores
  4. Matéria Condensada
  5. Espectroscopia Raman

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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