Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0-1 GHz waveguide 10.6 mu m GaAs electrooptic modulatorBrown, R.T.IEEE journal of quantum electronics, 1992-05, Vol.28 (5), p.1349-1352 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
2 |
Material Type: Artigo
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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateChen, Yong ; Mak, Pui-In ; Zhang, Li ; Qian, He ; Wang, YanElectronics letters, 2013-05, Vol.49 (11), p.692-694 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
3 |
Material Type: Artigo
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0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiencyChen, Yong ; Mak, Pui-In ; Zhang, Li ; Qian, He ; Wang, YanElectronics letters, 2013-10, Vol.49 (21), p.1340-1342 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
4 |
Material Type: Artigo
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0.05 μm (3σ) overlay accuracy through-the-lens alignment in an excimer laser lithography system: MicroProcessHIGASHIKI, T ; TOJO, T ; TAKAHASHI, Y ; TABATA, M ; NISHIZAKA, T ; KUWABARA, O ; UCHIDA, N ; YOSHINO, H ; SAITO, SJapanese journal of applied physics, 1992, Vol.31 (12B), p.4161-4166 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
5 |
Material Type: Artigo
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0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effectsENOKI, T ; TOMIZAWA, M ; UMEDA, Y ; ISHII, YJapanese Journal of Applied Physics, 1994, Vol.33 (1B), p.798-803 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
6 |
Material Type: Ata de Congresso
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A 0.013 mm2, 5 μW, DC-Coupled Neural Signal Acquisition IC With 0.5 V SupplyMULLER, Rikky ; GAMBINI, Simone ; RABAEY, Jan MIEEE journal of solid-state circuits, 2012, Vol.47 (1), p.232-243 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
7 |
Material Type: Artigo
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A 0.016-mm2 144-μW Three-Stage Amplifier Capable of Driving 1-to-15 nF Capacitive Load With >0.95-MHz GBWZUSHU YAN ; MAK, Pui-In ; LAW, Man-Kay ; MARTINS, Rui PIEEE journal of solid-state circuits, 2013, Vol.48 (2), p.527-540 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
8 |
Material Type: Ata de Congresso
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A 0.016 mm2, 2.4 GHz RF Signal Quality Measurement Macro for RF Test and DiagnosisNOSE, Koichi ; MIZUNO, MasayukiIEEE journal of solid-state circuits, 2008, Vol.43 (4), p.1038-1046 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
9 |
Material Type: Artigo
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A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch MatrixSHIN, Donghyup ; KANG, Dong-Woo ; REBEIZ, Gabriel MIEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
10 |
Material Type: Artigo
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A 0.018% THD+N, 88-dB PSRR PWM Class-D Amplifier for Direct Battery HookupCHOI, Youngkil ; TAK, Wonho ; YOON, Younghyun ; ROH, Jeongjin ; KWON, Sunwoo ; KOH, JinseokIEEE journal of solid-state circuits, 2012-02, Vol.47 (2), p.454-463 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |