Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical InterconnectsNguyen, Nga T. H. ; Ukaegbu, Ikechi Augustine ; Sangirov, Jamshid ; Cho, Mu Hee ; Lee, Tae Woo ; Park, Hyo HoonMicrowave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487 [Periódico revisado por pares]New York: Blackwell Publishing LtdTexto completo disponível |
2 |
Material Type: Artigo
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0.1 Grams of Sub-Cutaneous Adipose Tissue (SCAT) as Source of Adult Multipotent Mesenchymal Stromal Cells (MSC) for Cell-Based TherapiesDominici, Massimo ; Sternieri, Rita ; De Fazio, Domenico ; Cafarelli, Luigi ; Guaraldi, Giovanni ; Spano, Carlotta ; Rasini, Valeria ; Paolucci, Paolo ; Cilli, Michele ; Piccardi, Federica ; Astori, Giuseppe ; Hofmann, Ted J. ; Horwitz, Edwin M. ; Conte, PierfrancoBlood, 2007-11, Vol.110 (11), p.4915-4915 [Periódico revisado por pares]Elsevier IncTexto completo disponível |
3 |
Material Type: magazinearticle
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0.1-mm electrostatic microrelays switch at up to 100 GHzVollmer, AlfredElectronic design, 1997-12, Vol.45 (27), p.34Nashville: Endeavor Business MediaTexto completo disponível |
4 |
Material Type: Artigo
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0.1 ppm four‐terminal resistance bridge for use with a dilution refrigeratorEdmunds, D. L. ; Pratt, W. P. ; Rowlands, J. A.Review of scientific instruments, 1980-11, Vol.51 (11), p.1516-1522 [Periódico revisado por pares]Texto completo disponível |
5 |
Material Type: Ata de Congresso
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0.1 /spl mu/m delta-doped MOSFET using post low-energy implanting selective epitaxyNoda, K. ; Uchida, T. ; Tatsumi, T. ; Aoyama, T. ; Nakajima, K. ; Miyamoto, H. ; Hashimoto, T. ; Sasaki, I.Proceedings of 1994 VLSI Technology Symposium, 1994, p.19-20IEEETexto completo disponível |
6 |
Material Type: Ata de Congresso
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0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYang, J.-Y. ; Benaissa, K. ; Crenshaw, D. ; Williams, B. ; Sridhar, S. ; Ai, J. ; Boselli, G. ; Zhao, S. ; Tang, S.-P. ; Mahalingam, N. ; Ashburn, S. ; Madhani, P. ; Blythe, T. ; Shichijo, H.Digest. International Electron Devices Meeting, 2002, p.667-670IEEETexto completo disponível |
7 |
Material Type: Ata de Congresso
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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, NPiscataway NJ: IEEE 2002Texto completo disponível |
8 |
Material Type: Artigo
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130 years of evidence: risk of suicide among doctors and medical students; 130 anos de evidências: risco de suicídio entre médicos e estudantes de medicinaMuzzolon, Sandra Regina; Muzzolon, Mariana; Lima, Mônica NunesRevista de Medicina; v. 100 n. 6 (2021); 528-535Universidade de São Paulo. Faculdade de Medicina 2021-12-26Acesso online |
9 |
Material Type: Artigo
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A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architectureKim, Yeomyung ; Shon, Doohyun ; Kim, Tae WookInternational journal of circuit theory and applications, 2017-04, Vol.45 (4), p.466-482 [Periódico revisado por pares]Texto completo disponível |
10 |
Material Type: Artigo
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A 0.01-8-GHz (12.5 Gb/s) 4 \,\times\,4 CMOS Switch MatrixDonghyup Shin ; Dong-Woo Kang ; Rebeiz, G. M.IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386 [Periódico revisado por pares]IEEETexto completo disponível |