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1
2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy
2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy
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2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy

Sun, Yukun ; Fan, Shizhao ; Faucher, Joseph ; Hool, Ryan D. ; Li, Brian D. ; Dhingra, Pankul ; Lee, Minjoo Larry

Solar energy materials and solar cells, 2021-01, Vol.219 (C), p.110774, Article 110774 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Antiferromagnetic order in MnBi2Te4 films grown on Si(1 1 1) by molecular beam epitaxy
Antiferromagnetic order in MnBi2Te4 films grown on Si(1 1 1) by molecular beam epitaxy
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Antiferromagnetic order in MnBi2Te4 films grown on Si(1 1 1) by molecular beam epitaxy

Liu, N. ; Schreyeck, S. ; Fijalkowski, K.M. ; Kamp, M. ; Brunner, K. ; Gould, C. ; Molenkamp, L.W.

Journal of crystal growth, 2022-08, Vol.591, p.126677, Article 126677 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Molecular beam epitaxy growth of Mn4−xNixN thin films on MgO(0 0 1) substrates and their magnetic properties
Molecular beam epitaxy growth of Mn4−xNixN thin films on MgO(0 0 1) substrates and their magnetic properties
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Molecular beam epitaxy growth of Mn4−xNixN thin films on MgO(0 0 1) substrates and their magnetic properties

Komori, Taro ; Anzai, Akihito ; Gushi, Toshiki ; Toko, Kaoru ; Suemasu, Takashi

Journal of crystal growth, 2019-02, Vol.507, p.163-167 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy
The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy
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The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

Qian, Kun ; An, Yuying ; Cai, Hongjie ; Yang, Kaisen ; Qian, Jinhui ; Ding, Haokun ; Lin, Guangyang ; Wang, Jianyuan ; Xu, Jianfang ; Huang, Wei ; Chen, Songyan ; Li, Cheng

Journal of crystal growth, 2023-01, Vol.601, p.126954, Article 126954 [Periódico revisado por pares]

Elsevier B.V

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5
Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0&#8239;0&#8239;1) substrate
Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0&#8239;0&#8239;1) substrate
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Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0 0 1) substrate

Wu, Yuanpeng ; Wang, Yongjie ; Sun, Kai ; Mi, Zetian

Journal of crystal growth, 2019-02, Vol.507, p.65-69 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Dislocation density and strain-relaxation in Ge1&#8722;xSnx layers grown on Ge/Si (001) by low-temperature molecular beam epitaxy
Dislocation density and strain-relaxation in Ge1&#8722;xSnx layers grown on Ge/Si (001) by low-temperature molecular beam epitaxy
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Dislocation density and strain-relaxation in Ge1−xSnx layers grown on Ge/Si (001) by low-temperature molecular beam epitaxy

Khiangte, Krista R. ; Rathore, Jaswant S. ; Sharma, Vaibhav ; Bhunia, Swagata ; Das, Sudipta ; Fandan, Rajveer S. ; Pokharia, Ravinder S. ; Laha, Apurba ; Mahapatra, Suddhasatta

Journal of crystal growth, 2017-07, Vol.470, p.135-142 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0&#8239;0&#8239;1) substrate through controlled nanowire coalescence
Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0&#8239;0&#8239;1) substrate through controlled nanowire coalescence
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Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0 0 1) substrate through controlled nanowire coalescence

Wu, Yuanpeng ; Wang, Yongjie ; Sun, Kai ; Aiello, Anthony ; Bhattacharya, Pallab ; Mi, Zetian

Journal of crystal growth, 2018-09, Vol.498, p.109-114 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Photovoltaic properties of low-bandgap (0.7&#8211;0.9&#8239;eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs
Photovoltaic properties of low-bandgap (0.7&#8211;0.9&#8239;eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs
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Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs

Isoaho, Riku ; Aho, Arto ; Tukiainen, Antti ; Aho, Timo ; Raappana, Marianna ; Salminen, Turkka ; Reuna, Jarno ; Guina, Mircea

Solar energy materials and solar cells, 2019-06, Vol.195, p.198-203 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (1&#8239;1&#8239;0) Si substrates grown by ammonia molecular beam epitaxy
High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (1&#8239;1&#8239;0) Si substrates grown by ammonia molecular beam epitaxy
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High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (1 1 0) Si substrates grown by ammonia molecular beam epitaxy

Noh, Young-Kyun ; Lee, Sang-Tae ; Kim, Moon-Deock ; Oh, Jae-Eung

Journal of crystal growth, 2019-03, Vol.509, p.141-145 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Ternary Pb1&#8722;xCdxSe films grown by molecular beam epitaxy on GaAs/ZnTe hybrid substrates
Ternary Pb1&#8722;xCdxSe films grown by molecular beam epitaxy on GaAs/ZnTe hybrid substrates
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Ternary Pb1−xCdxSe films grown by molecular beam epitaxy on GaAs/ZnTe hybrid substrates

Chusnutdinow, S. ; Szot, M. ; Schreyeck, S. ; Aleszkiewicz, M. ; Kucherenko, I.V. ; Muratov, A.V. ; Yakovlev, V.A. ; Wojtowicz, T. ; Karczewski, G.

Journal of crystal growth, 2019-02, Vol.507, p.10-15 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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