Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
![]() |
The wetting of oxide films on silicon and the monitoring of fixed chargeStoneham, A M ; Tasker, P WSemiconductor science and technology, 1986-07, Vol.1 (1), p.93-96 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
2 |
Material Type: Artigo
|
![]() |
Spatial distribution of electroluminescence in ZnSe diodes with epitaxial I layerJones, A P C ; Brinkman, A W ; Russell, G J ; Woods, J ; Wright, P J ; Cockayne, BSemiconductor science and technology, 1986-07, Vol.1 (1), p.41-44 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
3 |
Material Type: Artigo
|
![]() |
Characteristics of silicon solar cells with polysilicon on the front surfaceMehta, S KSemiconductor science and technology, 1986-07, Vol.1 (1), p.97-101 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
4 |
Material Type: Artigo
|
![]() |
Dielectric spectroscopy of semi-insulating gallium arsenideJonscher, A K ; Pickup, C ; Zaidi, S HSemiconductor science and technology, 1986-07, Vol.1 (1), p.71-92 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
5 |
Material Type: Artigo
|
![]() |
Absorption studies of beryllium-doped siliconKleverman, M ; Grimmeiss, H GSemiconductor science and technology, 1986-07, Vol.1 (1), p.45-48 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
6 |
Material Type: Artigo
|
![]() |
Phonon-scattering limitation of the metallic conductivity of a quasi-two-dimensional semiconductor structureMilsom, P K ; Butcher, P NSemiconductor science and technology, 1986-07, Vol.1 (1), p.58-62 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
7 |
Material Type: Artigo
|
![]() |
Hot-electron transport in heavily doped GaAsLong, A P ; Beton, P H ; Kelly, M JSemiconductor science and technology, 1986-07, Vol.1 (1), p.63-70 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
8 |
Material Type: Artigo
|
![]() |
Investigation of InGaAs-InP quantum wells by optical spectroscopySkolnick, M S ; Tapster, P R ; Bass, S J ; Pitt, A D ; Apsley, N ; Aldred, S PSemiconductor science and technology, 1986-07, Vol.1 (1), p.29-40 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
9 |
Material Type: Artigo
|
![]() |
Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriersBlood, PSemiconductor science and technology, 1986-07, Vol.1 (1), p.7-27 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
10 |
Material Type: Artigo
|
![]() |
Photothermal investigations of magnesium-related donors in siliconKleverman, M ; Bergman, K ; Grimmeiss, H GSemiconductor science and technology, 1986-07, Vol.1 (1), p.49-52 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |