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1
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells

A Cavalheiro Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); E K Takahashi; S Martini; M J da Silva; E A Meneses; J. R Leite (José Roberto)

Journal of Physics: Condensed Matter Bristol v. 15, n. 2, p. 121-132, 2003

Bristol 2003

Acesso online

2
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells

A Cavalheiro Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); E K Takahashi; S Martini; M J da Silva; E A Meneses; J. R Leite (José Roberto)

Journal of Physics: Condensed Matter Bristol v. 15, n. 2, p. 121-132, 2003

Bristol 2003

Acesso online

3
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
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Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

C A Duarte Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); M J da Silva; S Martini; J. R Leite (José Roberto); E A Meneses; E Lauretto

Journal of Applied Physics Woodbury v. 93, n. 10, p. 6279-6283, 2003

Woodbury 2003

Acesso online

4
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Material Type:
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Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

C A Duarte Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); M J da Silva; S Martini; J. R Leite (José Roberto); E A Meneses; E Lauretto

Journal of Applied Physics Woodbury v. 93, n. 10, p. 6279-6283, 2003

Woodbury 2003

Acesso online

5
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
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Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface

S Martini A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); M J da Silva; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 101-105, 2003

Amsterdam 2003

Acesso online

6
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Material Type:
Artigo 		No Meu Espaço

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface

S Martini A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); M J da Silva; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 101-105, 2003

Amsterdam 2003

Acesso online

7
Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells
Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells
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Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells

R R O Morais I F L Dias; M A T da Silva; D F Cesar; J L Duarte; S A Lourenço; E Laureto; Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André)

Journal of Physics-Condensed Matter v. 21, n. 15, p. 155601/1-155601/7, 2009

Bristol 2009

Item não circula. Consulte sua biblioteca.(Acessar)

8
Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells
Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells

R R O Morais I F L Dias; M A T da Silva; D F Cesar; J L Duarte; S A Lourenço; E Laureto; Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André)

Journal of Physics-Condensed Matter v. 21, n. 15, p. 155601/1-155601/7, 2009

Bristol 2009

Item não circula. Consulte sua biblioteca.(Acessar)

9
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces

A. A. Quivy (Alain André) S Martini; T. E Lamas (Tomás Erikson); M. J. da Silva; Euzi Conceicao Fernandes da Silva; Brazilian Workshop on Semiconductor Physics (11. 2003 Fortaleza)

Book of Abstract Fortaleza : DF/UFC, 2003

Fortaleza DF/UFC 2003

Item não circula. Consulte sua biblioteca.(Acessar)

10
The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells
The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells

M A T da Silva R R O Morais; I F L Dias; S A Lourenço; J L Duarte; E Laureto; A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva

Journal of Physics-Condensed Matter v. 20, n. 25, p. 255246/1-255246/9, 2008

Bristol 2008

Acesso online

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Deste Autor:

  1. Silva, E
  2. Silva, M
  3. Quivy, A
  4. Martini, S
  5. Leite, J

Neste Assunto:

  1. Estrutura Eletrônica
  2. Semicondutores
  3. Fotoluminescência
  4. Difração Por Raios X
  5. Superfície Física

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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