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Refinado por: Nome da Publicação: Journal Of Applied Physics remover
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1
Leakage current as a probe into the mechanics of carrier transport in insulating composite polymers
Leakage current as a probe into the mechanics of carrier transport in insulating composite polymers
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Leakage current as a probe into the mechanics of carrier transport in insulating composite polymers

Mamun, M. Asaduz Zaman ; Mavinkurve, Amar ; van Soestbergen, Michiel ; Terzariol, Greta ; Alam, Muhammad A.

Journal of applied physics, 2024-04, Vol.135 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Influence of frequency on the partial discharge characteristics of biaxially oriented polypropylene film under nanosecond pulse voltage
Influence of frequency on the partial discharge characteristics of biaxially oriented polypropylene film under nanosecond pulse voltage
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Influence of frequency on the partial discharge characteristics of biaxially oriented polypropylene film under nanosecond pulse voltage

Mi, Yan ; Chen, Yong ; Liu, Canhui ; Zhu, Yakui ; Liu, Wentao ; Peng, Yiqin

Journal of applied physics, 2023-08, Vol.134 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps
Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps
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Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps

Weger, M. ; Feil, M. W. ; Van Orden, M. ; Cottom, J. ; Bockstedte, M. ; Pobegen, G.

Journal of applied physics, 2023-07, Vol.134 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2
Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2
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Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2

Sumiyoshi, Isshin ; Nose, Yoshitaro

Journal of applied physics, 2023-06, Vol.133 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Characteristics and development of damage in the interface of polyimide multilayer films under a repetitive-frequency-pulsed voltage
Characteristics and development of damage in the interface of polyimide multilayer films under a repetitive-frequency-pulsed voltage
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Characteristics and development of damage in the interface of polyimide multilayer films under a repetitive-frequency-pulsed voltage

Yu, Menghan ; Yang, Lanjun ; Xiao, Xinyan ; Zhang, Hongtao

Journal of applied physics, 2023-04, Vol.133 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Apparent anisotropic thermal diffusivity measured in cubic single crystals by transient grating spectroscopy
Apparent anisotropic thermal diffusivity measured in cubic single crystals by transient grating spectroscopy
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Apparent anisotropic thermal diffusivity measured in cubic single crystals by transient grating spectroscopy

Kušnír, Jakub ; Grabec, Tomáš ; Zoubková, Kristýna ; Stoklasová, Pavla ; Sedlák, Petr ; Seiner, Hanuš

Journal of applied physics, 2023-03, Vol.133 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Fabrication of TiO2 nanodot films using simple solution dipping method and block copolymer template
Fabrication of TiO2 nanodot films using simple solution dipping method and block copolymer template
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Fabrication of TiO2 nanodot films using simple solution dipping method and block copolymer template

Pandey, Krishna ; Perez, Marcos ; Korveziroska, Amelia ; Manna, Uttam ; Biswas, Mahua

Journal of applied physics, 2022-02, Vol.131 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Effect of deep level defects on CdZnTe detector internal electric field and device performance
Effect of deep level defects on CdZnTe detector internal electric field and device performance
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Effect of deep level defects on CdZnTe detector internal electric field and device performance

Qiu, Panhui ; Min, Jiahua ; Liang, Xiaoyan ; Zhang, Jijun ; Xie, Chen ; Song, Xiaolong ; Feng, Chengjie ; Wang, Shulei ; Shen, Yue ; Wang, Linjun

Journal of applied physics, 2021-11, Vol.130 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Deep levels related to the carbon antisite–vacancy pair in 4H-SiC
Deep levels related to the carbon antisite–vacancy pair in 4H-SiC
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Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Nakane, Hiroki ; Kato, Masashi ; Ohkouchi, Yutaro ; Trinh, Xuan Thang ; Ivanov, Ivan G. ; Ohshima, Takeshi ; Son, Nguyen Tien

Journal of applied physics, 2021-08, Vol.130 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Mn(III) complexes with nitro-substituted ligands—Spin states with a twist
Mn(III) complexes with nitro-substituted ligands—Spin states with a twist
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Mn(III) complexes with nitro-substituted ligands—Spin states with a twist

Kühne, Irina A. ; Gavin, Laurence C. ; Harris, Michelle ; Gildea, Brendan ; Müller-Bunz, Helge ; Stein, Matthias ; Morgan, Grace G.

Journal of applied physics, 2021-06, Vol.129 (21) [Periódico revisado por pares]

Melville: American Institute of Physics

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