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Results 1 - 10 of 29  for USP Intelectual Production

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Refined by: author/creator: Martino, J remove Journal Title: Proceedings remove
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1
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K
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A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; IEEE International Conference on Devices, Circuits and Syems (3. 2000 Cancun)

Proceedings Piscataway : IEEE, 2000

Piscataway IEEE 2000

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2
Análise de extração da resistência série em transistores SOI MOSFET de porta gêmea. (em CD-Rom)
Análise de extração da resistência série em transistores SOI MOSFET de porta gêmea. (em CD-Rom)
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Análise de extração da resistência série em transistores SOI MOSFET de porta gêmea. (em CD-Rom)

P T Hoashi João Antonio Martino 1959-; Conference of the Brazilian Microelectronics Society (12. 1997 Caxambu)

Proceedings Itajubá : SBMICRO/EFEI, 1997

Itajubá SBMICRO/EFEI 1997

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3
Analog circuit design using graded-channel SOI NMOSFETs
Analog circuit design using graded-channel SOI NMOSFETs
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Analog circuit design using graded-channel SOI NMOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; Symposium on Integrated Circuits and Systems Design (14. 2001 Campinas)

Proceedings Piscataway : IEEE, 2001

Piscataway IEEE 2001

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4
Analysis of the series resistance and effective channel lenght extraction of submicron MOS transistors operating at high temperature. (em CD-Rom)
Analysis of the series resistance and effective channel lenght extraction of submicron MOS transistors operating at high temperature. (em CD-Rom)
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Analysis of the series resistance and effective channel lenght extraction of submicron MOS transistors operating at high temperature. (em CD-Rom)

Aparecido Sirley Nicolett João Antonio Martino 1959-; E A Gutierrez; Conference of the Brazilian Microelectronics Society (12. 1997 Caxambu)

Proceedings Itajubá : SBMICRO/EFEI, 1997

Itajubá SBMICRO/EFEI 1997

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5
Analysis of the subthreshold slope transition region in soi mosfet
Analysis of the subthreshold slope transition region in soi mosfet
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Analysis of the subthreshold slope transition region in soi mosfet

Victor Sonnenberg João Antonio Martino 1959-; Conference of the Brazilian Microelectronics Society (11. 1996 Águas de Lindóia, SP)

Proceedings São Paulo : Sbmicro, 1996

São Paulo Sbmicro 1996

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6
Comparison between drain induced barrier lowering in partially and fully depleted 0.13'mu'm SOI nMOSFETs in low temperature operation
Comparison between drain induced barrier lowering in partially and fully depleted 0.13'mu'm SOI nMOSFETs in low temperature operation
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Comparison between drain induced barrier lowering in partially and fully depleted 0.13'mu'm SOI nMOSFETs in low temperature operation

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; European Workshop on Low Temperature Electronics (6. 2004 Noordwijk, The Netherlands)

Proceedings

Noordwijk 2004

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7
Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs
Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs
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Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; IEEE International Conference on Devices, Circuits and Syems (3. 2000 Cancun)

Proceedings Piscataway : IEEE, 2000

Piscataway IEEE 2000

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8
Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
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Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)

Marcello Bellodi João Antonio Martino 1959-; Conference of the Brazilian Microelectronics Society (12. 1997 Caxambu)

Proceedings Itajubá : SBMICRO/EFEI, 1997

Itajubá SBMICRO/EFEI 1997

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9
Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor
Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor
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Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor

Victor Sonnenberg João Antonio Martino 1959-; International Symposium on Silicon-on-Insulator Technology and Devices (10. 2001 Washington, DC)

Proceedings Pennington : The Electrochemical Society, 2001

Pennington The Electrochemical Society 2001

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10
Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
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Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Silicon-on-Insulator Technology and Devices (10. 2001 Washington, DC)

Proceedings Pennington : The Electrochemical Society, 2001

Pennington The Electrochemical Society 2001

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Results 1 - 10 of 29  for USP Intelectual Production

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