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1
(110) surface states of GaAs: Sensitivity of electronic structure to surface structure
(110) surface states of GaAs: Sensitivity of electronic structure to surface structure
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(110) surface states of GaAs: Sensitivity of electronic structure to surface structure

Chadi, D. J.

Physical review. B, Condensed matter, 1978-01, Vol.18 (4), p.1800-1812 [Peer Reviewed Journal]

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2
Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs
Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs
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Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs

Pickett, Warren E. ; Louie, Steven G. ; Cohen, Marvin L.

Physical review. B, Condensed matter, 1978-01, Vol.17 (2), p.815-828 [Peer Reviewed Journal]

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3
Surface relaxation of zinc blende (110)
Surface relaxation of zinc blende (110)
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Surface relaxation of zinc blende (110)

Tougaard, S.

Physical review. B, Condensed matter, 1978-01, Vol.18 (8), p.3799-3809 [Peer Reviewed Journal]

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4
Electronic states at unrelaxed and relaxed GaAs (110) surfaces
Electronic states at unrelaxed and relaxed GaAs (110) surfaces
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Electronic states at unrelaxed and relaxed GaAs (110) surfaces

Mele, Eugene J. ; Joannopoulos, J. D.

Physical review. B, Condensed matter, 1978-01, Vol.17 (4), p.1816-1827 [Peer Reviewed Journal]

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5
Nonlocal pseudopotential calculation of the electronic properties of relaxed GaAs (110) surface
Nonlocal pseudopotential calculation of the electronic properties of relaxed GaAs (110) surface
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Nonlocal pseudopotential calculation of the electronic properties of relaxed GaAs (110) surface

Zunger, Alex

Physical review. B, Condensed matter, 1980-01, Vol.22 (2), p.959-969 [Peer Reviewed Journal]

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6
Theoretical study of the electronic structure of GaP(110)
Theoretical study of the electronic structure of GaP(110)
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Theoretical study of the electronic structure of GaP(110)

Manghi, F. ; Bertoni, C. M. ; Calandra, C. ; Molinari, E.

Physical review. B, Condensed matter, 1981-01, Vol.24 (10), p.6029-6042 [Peer Reviewed Journal]

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7
Electron states of an Sb-ordered overlayer on GaAs(110)
Electron states of an Sb-ordered overlayer on GaAs(110)
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Electron states of an Sb-ordered overlayer on GaAs(110)

Bertoni, C. M. ; Calandra, C. ; Manghi, F. ; Molinari, E.

Physical review. B, Condensed matter, 1983-01, Vol.27 (2), p.1251-1258 [Peer Reviewed Journal]

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8
Conduction-band dispersion, critical points, and unoccupied surface states on GaAs(110): a high-resolution angle-resolved inverse photoemission study
Conduction-band dispersion, critical points, and unoccupied surface states on GaAs(110): a high-resolution angle-resolved inverse photoemission study
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Conduction-band dispersion, critical points, and unoccupied surface states on GaAs(110): a high-resolution angle-resolved inverse photoemission study

STRAUB, D ; SKIBOWSKI, M ; HIMPSEL, F. J

Physical review. B, Condensed matter, 1985-10, Vol.32 (8), p.5237-5244 [Peer Reviewed Journal]

Woodbury, NY: American Physical Society

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9
Atomic and electronic structure of ZnS cleavage surfaces
Atomic and electronic structure of ZnS cleavage surfaces
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Atomic and electronic structure of ZnS cleavage surfaces

WANG, Y. R ; DUKE, C. B

Physical review. B, Condensed matter, 1987-08, Vol.36 (5), p.2763-2769 [Peer Reviewed Journal]

Woodbury, NY: American Physical Society

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10
Angle-resolved inverse photoelectron spectroscopy studies of CdTe(110), CdS(1120), and CdSe(1120)
Angle-resolved inverse photoelectron spectroscopy studies of CdTe(110), CdS(1120), and CdSe(1120)
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Angle-resolved inverse photoelectron spectroscopy studies of CdTe(110), CdS(1120), and CdSe(1120)

MAGNUSSON, K. O ; KARLSSON, U. O ; STRAUB, D ; FLODSTROM, S. A ; HIMPSEL, F. J

Physical review. B, Condensed matter, 1987-10, Vol.36 (12), p.6566-6573 [Peer Reviewed Journal]

Woodbury, NY: American Physical Society

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