Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artículo
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An optoelectronic heterostructure for neuromorphic computing: CdS/V3O5Adda, C. ; Navarro, H. ; Kaur, J. ; Lee, M.-H. ; Chen, C. ; Rozenberg, M. ; Ong, S. P. ; Schuller, Ivan K.Applied physics letters, 2022-07, Vol.121 (4) [Revista revisada por pares]Melville: American Institute of PhysicsTexto completo disponible |
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Material Type: Artículo
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Epitaxial LaAlO{sub 3} thin film on silicon: Structure and electronic propertiesMi, Y. Y. ; Yu, Z. ; Wang, S. J. ; Lim, P. C. ; Foo, Y. L. ; Huan, A. C. H. ; Ong, C. K. ; Freescale Semiconductor, Inc. Tempe, Arizona 85284 ; Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 ; Department of Physics, National University of Singapore, Singapore 117542Applied physics letters, 2007-04, Vol.90 (18) [Revista revisada por pares]United StatesTexto completo disponible |
3 |
Material Type: Artículo
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Effect of nitrogen doping on optical properties and electronic structures of SrTiO{sub 3} filmsMi, Y. Y. ; Wang, S. J. ; Chai, J. W. ; Pan, J. S. ; Huan, C. H. A. ; Feng, Y. P. ; Ong, C. K. ; Institute of Materials Research and Engineering, Singapore 117602 ; Department of Physics, National University of Singapore, Singapore 117542Applied physics letters, 2006-12, Vol.89 (23) [Revista revisada por pares]United StatesTexto completo disponible |
4 |
Material Type: Artículo
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Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealingOng, K. K. ; Pey, K. L. ; Lee, P. S. ; Wee, A. T. S. ; Wang, X. C. ; Chong, Y. F.Applied physics letters, 2006-10, Vol.89 (17), p.172111-172111-3 [Revista revisada por pares]United States: American Institute of PhysicsTexto completo disponible |
5 |
Material Type: Artículo
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Role of low temperature rapid thermal annealing in post-laser-annealed p -channel metal-oxide-semiconductor field effect transistorOng, K. K. ; Pey, K. L. ; Lee, P. S. ; Wee, A. T. S. ; Wang, X. C. ; Tung, C. H. ; Tang, L. J. ; Chong, Y. F.Applied physics letters, 2006-09, Vol.89 (12), p.122113-122113-3 [Revista revisada por pares]United States: American Institute of PhysicsTexto completo disponible |
6 |
Material Type: Artículo
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Dopant activation in subamorphized silicon upon laser annealingOng, K. K. ; Pey, K. L. ; Lee, P. S. ; Wee, A. T. S. ; Wang, X. C. ; Chong, Y. F.Applied physics letters, 2006-08, Vol.89 (8), p.082101-082101-3 [Revista revisada por pares]United States: American Institute of PhysicsTexto completo disponible |
7 |
Material Type: Artículo
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Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbonOng, T. P. ; Xiong, Fulin ; Chang, R. P. H. ; White, C. W.Applied physics letters, 1992-04, Vol.60 (17 A), p.2083-2085 [Revista revisada por pares]Legacy CDMS: Amer Inst PhysicsTexto completo disponible |
8 |
Material Type: Artículo
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Mechanism for diamond nucleation and growth on single cystal copper surfaces implanted with carbonONG, T. P ; FULIN XIONG ; CHANG, R. P. H ; WHITE, C. WApplied physics letters, 1992, Vol.60 (17), p.2083-2085 [Revista revisada por pares]Melville, NY: American Institute of PhysicsTexto completo disponible |
9 |
Material Type: Artículo
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Properties of diamond composite films grown on iron surfacesOng, T. P. ; Chang, R. P. H.Applied physics letters, 1991-01, Vol.58 (4), p.358-360 [Revista revisada por pares]United StatesTexto completo disponible |
10 |
Material Type: Artículo
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Low-temperature deposition of diamond films for optical coatingsONG, T. P ; CHANG, R. P. HApplied physics letters, 1989-11, Vol.55 (20), p.2063-2065 [Revista revisada por pares]Melville, NY: American Institute of PhysicsTexto completo disponible |