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A comprehensive study of failure mode in IGBT applications due to freewheeling diode snappy recovery
A comprehensive study of failure mode in IGBT applications due to freewheeling diode snappy recovery
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Ata de Congresso 		Adicionar ao Meu Espaço

A comprehensive study of failure mode in IGBT applications due to freewheeling diode snappy recovery

Rahimo, M.T.

Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242), 1998, Vol.2, p.840-847 vol.2

IEEE

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2
A novel concept for fast recovery diodes having junction charge extraction (JCE) regions
A novel concept for fast recovery diodes having junction charge extraction (JCE) regions
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A novel concept for fast recovery diodes having junction charge extraction (JCE) regions

Rahimo, M.T. ; Crees, D.E. ; Shammas, N.Y.A.

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 1998, p.309-312

IEEE

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3
Analysis of the IGBT/freewheeling diode switching behaviour during turn-on in hard switching applications
Analysis of the IGBT/freewheeling diode switching behaviour during turn-on in hard switching applications
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Analysis of the IGBT/freewheeling diode switching behaviour during turn-on in hard switching applications

Rahimo, M.T ; Chamund, D.J ; Shammas, N.Y.A

IEE conference publication, 1998, p.381-386

London: IEE

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4
Design considerations of the diode effective area with regard to the reverse recovery performance
Design considerations of the diode effective area with regard to the reverse recovery performance
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Design considerations of the diode effective area with regard to the reverse recovery performance

Rahimo, M.T. ; Shammas, N.Y.A.

Microelectronics, 1999-06, Vol.30 (6), p.499-503

Elsevier Ltd

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5
Reverse recovery failure modes in modern fast recovery diodes
Reverse recovery failure modes in modern fast recovery diodes
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Reverse recovery failure modes in modern fast recovery diodes

Rahimo, M.T. ; Shammas, N.Y.A.

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400), 2000, Vol.2, p.659-662 vol.2

IEEE

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6
Characterisation of 4H-SiC Schottky diodes for IGBT applications
Characterisation of 4H-SiC Schottky diodes for IGBT applications
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Characterisation of 4H-SiC Schottky diodes for IGBT applications

Johnson, C.M. ; Rahimo, M. ; Wright, N.G. ; Hinchley, D.A. ; Horsfall, A.B. ; Morrison, D.J. ; Knights, A.

Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2000, Vol.5, p.2941-2947 vol.5

IEEE

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7
Test and characterisation of modern fast recovery diodes for high speed switching applications
Test and characterisation of modern fast recovery diodes for high speed switching applications
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Test and characterisation of modern fast recovery diodes for high speed switching applications

Rahimo, M.T ; Shammas, N.Y.A

8th International Conference on Power Electronics and Variable Speed Drives, 2000, p.103-108

London: IEE

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8
1.6 kV 4H-SiC Schottky diodes for IGBT applications
1.6 kV 4H-SiC Schottky diodes for IGBT applications
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1.6 kV 4H-SiC Schottky diodes for IGBT applications

Johnson, C.M ; Rahimo, M ; Wright, N.G ; Hinchley, D.A ; Horsfall, A.B ; Morrison, D.J ; Knights, A

8th International Conference on Power Electronics and Variable Speed Drives, 2000, p.241-245

London: IEE

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9
Freewheeling diode reverse-recovery failure modes in IGBT applications
Freewheeling diode reverse-recovery failure modes in IGBT applications
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Freewheeling diode reverse-recovery failure modes in IGBT applications

Rahimo, M.T. ; Shammas, N.Y.A.

IEEE transactions on industry applications, 2001-03, Vol.37 (2), p.661-670 [Periódico revisado por pares]

New York: IEEE

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10
Extending the boundary limits of high voltage IGBTs and diodes to above 8kV
Extending the boundary limits of high voltage IGBTs and diodes to above 8kV
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Extending the boundary limits of high voltage IGBTs and diodes to above 8kV

RAHIMO, M ; KOPTA, A ; EICHER, S ; KAMINSKI, N ; BAUE, F ; SCHLAPBACH, U ; LINDER, S

Piscataway NJ: IEEE 2002

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