Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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A comprehensive study of failure mode in IGBT applications due to freewheeling diode snappy recoveryRahimo, M.T.Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242), 1998, Vol.2, p.840-847 vol.2IEEETexto completo disponível |
2 |
Material Type: Ata de Congresso
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A novel concept for fast recovery diodes having junction charge extraction (JCE) regionsRahimo, M.T. ; Crees, D.E. ; Shammas, N.Y.A.Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 1998, p.309-312IEEETexto completo disponível |
3 |
Material Type: Ata de Congresso
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Analysis of the IGBT/freewheeling diode switching behaviour during turn-on in hard switching applicationsRahimo, M.T ; Chamund, D.J ; Shammas, N.Y.AIEE conference publication, 1998, p.381-386London: IEETexto completo disponível |
4 |
Material Type: Artigo
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Design considerations of the diode effective area with regard to the reverse recovery performanceRahimo, M.T. ; Shammas, N.Y.A.Microelectronics, 1999-06, Vol.30 (6), p.499-503Elsevier LtdTexto completo disponível |
5 |
Material Type: Ata de Congresso
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Reverse recovery failure modes in modern fast recovery diodesRahimo, M.T. ; Shammas, N.Y.A.2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400), 2000, Vol.2, p.659-662 vol.2IEEETexto completo disponível |
6 |
Material Type: Ata de Congresso
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Characterisation of 4H-SiC Schottky diodes for IGBT applicationsJohnson, C.M. ; Rahimo, M. ; Wright, N.G. ; Hinchley, D.A. ; Horsfall, A.B. ; Morrison, D.J. ; Knights, A.Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2000, Vol.5, p.2941-2947 vol.5IEEETexto completo disponível |
7 |
Material Type: Ata de Congresso
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Test and characterisation of modern fast recovery diodes for high speed switching applicationsRahimo, M.T ; Shammas, N.Y.A8th International Conference on Power Electronics and Variable Speed Drives, 2000, p.103-108London: IEETexto completo disponível |
8 |
Material Type: Ata de Congresso
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1.6 kV 4H-SiC Schottky diodes for IGBT applicationsJohnson, C.M ; Rahimo, M ; Wright, N.G ; Hinchley, D.A ; Horsfall, A.B ; Morrison, D.J ; Knights, A8th International Conference on Power Electronics and Variable Speed Drives, 2000, p.241-245London: IEETexto completo disponível |
9 |
Material Type: Artigo
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Freewheeling diode reverse-recovery failure modes in IGBT applicationsRahimo, M.T. ; Shammas, N.Y.A.IEEE transactions on industry applications, 2001-03, Vol.37 (2), p.661-670 [Periódico revisado por pares]New York: IEEETexto completo disponível |
10 |
Material Type: Ata de Congresso
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Extending the boundary limits of high voltage IGBTs and diodes to above 8kVRAHIMO, M ; KOPTA, A ; EICHER, S ; KAMINSKI, N ; BAUE, F ; SCHLAPBACH, U ; LINDER, SPiscataway NJ: IEEE 2002Texto completo disponível |