Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Recurso Textual
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The Japan-Korea Conference on Ferroelectrics, 8thThe Japan-Korea Conference on Ferroelectrics (August 3-6, 2010) Himeji, Japan 8ThJournal of The Korean Physical Society (v.59, n.3, part. 1, 2011)Himeji, Japan The Korean Physical Society 2011Localização: IF - Instituto de Física (J. Korean Phys. Soc., V.59, N.3, Part.1, 2011 )(Acessar) |
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Material Type: Recurso Textual
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Korean conference on semiconductors, 18thKorean Conference on Semiconductors (2/16 - 2/18, 2011) Jeju 18thJournal of The Korean Physical Society (v.59, n.2, part. 1, 2011)Seoul, Korea The Korean Physical Society 2011Localização: IF - Instituto de Física (J. KOREAN PHYS. SOC., V.59, N.2, PART.1, 2011 )(Acessar) |
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Material Type: Recurso Textual
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International Conference on Accelerator and Beam Utilization, 14ThInternational Conference on Accelerator and Beam Utilization (Outubro 7-8, 2010) Gyeongju, Korea 14ThJournal of The Korean Physical Society (v.59, n.2, part. 2, 2011)Seoul, Korea The Korean Physical Society 2011Localização: IF - Instituto de Física (J. Korean Phys. Soc., V.59, N.2, Part.2, 2011 )(Acessar) |
4 |
Material Type: Artigo
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Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunctionVirot, Léopold ; Benedikovic, Daniel ; Szelag, Bertrand ; Alonso-Ramos, Carlos ; Karakus, Bayram ; Hartmann, Jean-Michel ; Le Roux, Xavier ; Crozat, Paul ; Cassan, Eric ; Marris-Morini, Delphine ; Baudot, Charles ; Boeuf, Frédéric ; Fédéli, Jean-Marc ; Kopp, Christophe ; Vivien, LaurentOptics express, 2017-08, Vol.25 (16), p.19487 [Periódico revisado por pares]Optical Society of America - OSA PublishingTexto completo disponível |
5 |
Material Type: Artigo
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On-chip and freestanding elastic carbon films for micro-supercapacitorsHuang, P. ; Lethien, C. ; Pinaud, S. ; Brousse, K. ; Laloo, R. ; Turq, V. ; Respaud, M. ; Demortière, A. ; Daffos, B. ; Taberna, P. L. ; Chaudret, B. ; Gogotsi, Y. ; Simon, P.Science (American Association for the Advancement of Science), 2016-02, Vol.351 (6274), p.691-695 [Periódico revisado por pares]United States: American Association for the Advancement of ScienceTexto completo disponível |
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Material Type: Artigo
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Shaping single crystalline BaTiO 3 nanostructures by focused neon or helium ion millingOlaniyan, I I ; Schmitt, S W ; Albert, J ; Garcia Fernandez, J ; Marcelot, C ; Cours, R ; Deshpande, V ; Cherkashin, N ; Schamm-Chardon, S ; Kim, D J ; Dubourdieu, CNanotechnology, 2024-08, Vol.35 (33), p.335301 [Periódico revisado por pares]England: Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au NanowiresSharma, Deepak K ; Agreda, Adrian ; Dell’ova, Florian ; Malchow, Konstantin ; Colas des Francs, Gérard ; Dujardin, Erik ; Bouhelier, AlexandreACS nano, 2024 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
8 |
Material Type: Artigo
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Molecular Connectors Boosting the Performance of MoS 2 Cathodes in Zinc-Ion BatteriesGuo, Haipeng ; Montes-García, Verónica ; Peng, Haijun ; Samorì, Paolo ; Ciesielski, ArturSmall (Weinheim an der Bergstrasse, Germany), 2024-02, Vol.20 (29), p.e2310338 [Periódico revisado por pares]Germany: Wiley-VCH VerlagTexto completo disponível |
9 |
Material Type: Artigo
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L-shaped fiber-chip grating couplers with high directionality and low reflectivity fabricated with deep-UV lithographyBenedikovic, Daniel ; Alonso-Ramos, Carlos ; Pérez-Galacho, Diego ; Guerber, Sylvain ; Vakarin, Vladyslav ; Marcaud, Guillaume ; Le Roux, Xavier ; Cassan, Eric ; Marris-Morini, Delphine ; Cheben, Pavel ; Boeuf, Frédéric ; Baudot, Charles ; Vivien, LaurentOptics letters, 2017-09, Vol.42 (17), p.3439 [Periódico revisado por pares]United States: Optical Society of America - OSA PublishingSem texto completo |
10 |
Material Type: Artigo
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Exploring compact modeling of SiGe HBTs in sub-THz range with HICUMPanda, Soumya Ranjan ; Zimmer, Thomas ; Chakravorty, Anjan ; Derrier, Nicolas ; Fregonese, SebastienIEEE transactions on electron devices, 2024-01, Vol.71 (1), p.173-183 [Periódico revisado por pares]Institute of Electrical and Electronics EngineersTexto completo disponível |