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The interface between silicon and a high- k oxide
The interface between silicon and a high- k oxide
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The interface between silicon and a high- k oxide

Blöchl, Peter E ; Först, Clemens J ; Ashman, Christopher R ; Schwarz, Karlheinz

Nature, 2004-01, Vol.427 (6969), p.53-56 [Peer Reviewed Journal]

London: Nature Publishing

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Orientational Effects on the Electronic Structure and Polarization in Sc3N@C80
Orientational Effects on the Electronic Structure and Polarization in Sc3N@C80
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Orientational Effects on the Electronic Structure and Polarization in Sc3N@C80

Ashman, Christopher R ; Halilov, Samed

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2022-03, Vol.126 (10), p.1605-1616 [Peer Reviewed Journal]

American Chemical Society

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Orientational Effects on the Electronic Structure and Polarization in Sc 3 N@C 80
Orientational Effects on the Electronic Structure and Polarization in Sc 3 N@C 80
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Orientational Effects on the Electronic Structure and Polarization in Sc 3 N@C 80

Ashman, Christopher R ; Halilov, Samed

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2022-03, Vol.126 (10), p.1605-1616 [Peer Reviewed Journal]

United States

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4
Nitrogen adsorption phases on the 4H–SiC(0 0 0 1) Si-face
Nitrogen adsorption phases on the 4H–SiC(0 0 0 1) Si-face
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Nitrogen adsorption phases on the 4H–SiC(0 0 0 1) Si-face

Ashman, Christopher R. ; Pennington, Gary

Surface science, 2008-12, Vol.602 (23), p.3617-3622 [Peer Reviewed Journal]

Kidlington: Elsevier B.V

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5
Chemistry of La on the Si(001) surface from first principles
Chemistry of La on the Si(001) surface from first principles
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Chemistry of La on the Si(001) surface from first principles

ASHMAN, Christopher R ; FÖRST, Clemens J ; SCHWARZ, Karlheinz ; BLÖCHL, Peter E

Physical review. B, Condensed matter and materials physics, 2004-10, Vol.70 (15), p.155330.1-155330.10, Article 155330 [Peer Reviewed Journal]

Ridge, NY: American Physical Society

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6
First-principles study of oxygen adsorption on the nitrogen-passivated 4 H -SiC (0001) silicon face
First-principles study of oxygen adsorption on the nitrogen-passivated 4 H -SiC (0001) silicon face
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First-principles study of oxygen adsorption on the nitrogen-passivated 4 H -SiC (0001) silicon face

Ashman, Christopher R. ; Pennington, Gary

Physical review. B, Condensed matter and materials physics, 2009-08, Vol.80 (8), Article 085318

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7
Ferroelectricity in strained Ca 0.5 Sr 0.5 TiO 3 from first principles
Ferroelectricity in strained Ca 0.5 Sr 0.5 TiO 3 from first principles
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Ferroelectricity in strained Ca 0.5 Sr 0.5 TiO 3 from first principles

Ashman, Christopher R. ; Hellberg, C. Stephen ; Halilov, Samed

Physical review. B, Condensed matter and materials physics, 2010-07, Vol.82 (2), Article 024112

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8
First-principles calculations of strontium on Si(001)
First-principles calculations of strontium on Si(001)
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First-principles calculations of strontium on Si(001)

Ashman, Christopher R. ; Först, Clemens J. ; Schwarz, Karlheinz ; Blöchl, Peter E.

Physical review. B, Condensed matter and materials physics, 2004-02, Vol.69 (7), Article 075309

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9
Ferroelectricity in strained Ca$_{0.5}$Sr$_{0.5}$TiO$_3$ from first principles
Ferroelectricity in strained Ca$_{0.5}$Sr$_{0.5}$TiO$_3$ from first principles
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Ferroelectricity in strained Ca$_{0.5}$Sr$_{0.5}$TiO$_3$ from first principles

Ashman, Christopher R ; Hellberg, C. Stephen ; Halilov, Samed

2010-07

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10
Ferroelectricity in strained Ca\(_{0.5}\)Sr\(_{0.5}\)TiO\(_3\) from first principles
Ferroelectricity in strained Ca\(_{0.5}\)Sr\(_{0.5}\)TiO\(_3\) from first principles
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Ferroelectricity in strained Ca\(_{0.5}\)Sr\(_{0.5}\)TiO\(_3\) from first principles

Ashman, Christopher R ; Hellberg, C Stephen ; Halilov, Samed

arXiv.org, 2010-07

Ithaca: Cornell University Library, arXiv.org

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