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1
GaMnAs position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations
GaMnAs position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations
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GaMnAs position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations

R R Pela M Marques; Luiz Guimarães Ferreira; Jurgen Furthmüller; L. K Teles (Lara Kühl)

Applied Physics Letters New York v. 100, n. 20, p. 202408/1-202408/4, 2012

New York 2012

Item não circula. Consulte sua biblioteca.(Acessar)

2
Characterization of an extrapolation chamber for low-energy X-rays: Experimental and Monte Carlo preliminary results
Characterization of an extrapolation chamber for low-energy X-rays: Experimental and Monte Carlo preliminary results
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Characterization of an extrapolation chamber for low-energy X-rays: Experimental and Monte Carlo preliminary results

Lucio Pereira Neves Eric Alexandre Brito da Silva; Ana P Perini; Nora Lia Maidana; Linda Viola Ehlin Caldas; International Topical Meeting on Industrial Radiation and Radioisotope Measurement Applications (IRRMA-8) Kansas City, MO) 2011 (8th

Applied Radiation and Isotopes Oxford v. 70, n. 7, p. 1388-1391, 2012

Oxford Pergamon-Elsevier 2012

Item não circula. Consulte sua biblioteca.(Acessar)

3
Intermolecular Energy Gap‐Induced Formation of High‐Valent Cobalt Species in CoOOH Surface Layer on Cobalt Sulfides for Efficient Water Oxidation
Intermolecular Energy Gap‐Induced Formation of High‐Valent Cobalt Species in CoOOH Surface Layer on Cobalt Sulfides for Efficient Water Oxidation
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Intermolecular Energy Gap‐Induced Formation of High‐Valent Cobalt Species in CoOOH Surface Layer on Cobalt Sulfides for Efficient Water Oxidation

Yao, Na ; Wang, Gongwei ; Jia, Hongnan ; Yin, Jinlong ; Cong, Hengjiang ; Chen, Shengli ; Luo, Wei

Angewandte Chemie International Edition, 2022-07, Vol.61 (28), p.e202117178-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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4
Achieving zT > 2 in p‐Type AgSbTe2−xSex Alloys via Exploring the Extra Light Valence Band and Introducing Dense Stacking Faults
Achieving zT > 2 in p‐Type AgSbTe2−xSex Alloys via Exploring the Extra Light Valence Band and Introducing Dense Stacking Faults
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Achieving zT > 2 in p‐Type AgSbTe2−xSex Alloys via Exploring the Extra Light Valence Band and Introducing Dense Stacking Faults

Hong, Min ; Chen, Zhi‐Gang ; Yang, Lei ; Liao, Zhi‐Ming ; Zou, Yi‐Chao ; Chen, Yan‐Hui ; Matsumura, Syo ; Zou, Jin

Advanced energy materials, 2018-03, Vol.8 (9), p.n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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5
Highly Converged Valence Bands and Ultralow Lattice Thermal Conductivity for High‐Performance SnTe Thermoelectrics
Highly Converged Valence Bands and Ultralow Lattice Thermal Conductivity for High‐Performance SnTe Thermoelectrics
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Highly Converged Valence Bands and Ultralow Lattice Thermal Conductivity for High‐Performance SnTe Thermoelectrics

Sarkar, Debattam ; Ghosh, Tanmoy ; Banik, Ananya ; Roychowdhury, Subhajit ; Sanyal, Dirtha ; Biswas, Kanishka

Angewandte Chemie International Edition, 2020-06, Vol.59 (27), p.11115-11122 [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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6
Effect of oxygen vacancies on the band edge properties of WO3 producing enhanced photocurrents
Effect of oxygen vacancies on the band edge properties of WO3 producing enhanced photocurrents
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Effect of oxygen vacancies on the band edge properties of WO3 producing enhanced photocurrents

Kalanur, Shankara S. ; Yoo, Il-Han ; Cho, In-Sun ; Seo, Hyungtak

Electrochimica acta, 2019-02, Vol.296, p.517-527 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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7
Observations on Valence‐Band Electronic Structure and Surface States of Bulk Insulators Based on Fast Stabilization Process of Sample Charging in UPS
Observations on Valence‐Band Electronic Structure and Surface States of Bulk Insulators Based on Fast Stabilization Process of Sample Charging in UPS
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Observations on Valence‐Band Electronic Structure and Surface States of Bulk Insulators Based on Fast Stabilization Process of Sample Charging in UPS

Zhu, Lei ; Li, Wei ; Ma, Liran ; Xu, Xuefeng ; Luo, Jianbin

Laser & photonics reviews, 2024-07, Vol.18 (7), p.n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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8
Modulating valence band to enhance the catalytic activity of Co-Cr-B/NG for hydrolysis of sodium borohydride
Modulating valence band to enhance the catalytic activity of Co-Cr-B/NG for hydrolysis of sodium borohydride
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Modulating valence band to enhance the catalytic activity of Co-Cr-B/NG for hydrolysis of sodium borohydride

Li, Huashuan ; Li, Bin ; Zou, Yongjin ; Xiang, Cuili ; Zhang, Huanzhi ; Xu, Fen ; Sun, Lixian ; He, Kejian

Journal of alloys and compounds, 2022-11, Vol.924, p.166556, Article 166556 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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9
Correlation between carrier recombination and valence band offset effect of graded Cu(In,Ga)Se2 solar cells
Correlation between carrier recombination and valence band offset effect of graded Cu(In,Ga)Se2 solar cells
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Correlation between carrier recombination and valence band offset effect of graded Cu(In,Ga)Se2 solar cells

Wang, Yazi ; Muryobayashi, Toya ; Nakada, Kazuyoshi ; Li, Zhengcao ; Yamada, Akira

Solar energy materials and solar cells, 2019-10, Vol.201, p.110070, Article 110070 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Surface Study of CuO Nanopetals by Advanced Nanocharacterization Techniques with Enhanced Optical and Catalytic Properties
Surface Study of CuO Nanopetals by Advanced Nanocharacterization Techniques with Enhanced Optical and Catalytic Properties
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Surface Study of CuO Nanopetals by Advanced Nanocharacterization Techniques with Enhanced Optical and Catalytic Properties

Khan, Muhammad Arif ; Nayan, Nafarizal ; Shadiullah ; Ahmad, Mohd Khairul ; Soon, Chin Fhong

Nanomaterials (Basel, Switzerland), 2020-07, Vol.10 (7), p.1298 [Periódico revisado por pares]

Switzerland: MDPI AG

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Deste Autor:

  1. Teles, L
  2. Neves, L
  3. Furthmüller, J
  4. Ferreira, L
  5. Marques, M

Neste Assunto:

  1. Valence Band
  2. Science & Technology
  3. Physical Sciences
  4. Physics
  5. Technology

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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