Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Preparation of irregular silica nano-abrasives for the chemical mechanical polishing behaviour on sapphire substratesDong, Yue ; Lei, Hong ; Liu, WenqingMicro & nano letters, 2019-11, Vol.14 (13), p.1328-1333 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
2 |
Material Type: Artigo
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A CNN Based CMP Planarization Model Considering LDE EffectBao, Han ; Chen, LanIEEE transactions on components, packaging, and manufacturing technology (2011), 2020-04, Vol.10 (4), p.1-1 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
3 |
Material Type: Artigo
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Preliminary Study on Fluidized Bed Chemical Mechanical Polishing (FB-CMP) Process for Stainless Steel 304 (SS304)Kim, Taekyoung ; Lee, HyunseopMicromachines (Basel), 2020-07, Vol.11 (7), p.705 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
4 |
Material Type: Artigo
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Effects of trivalent lanthanide (La and Nd) doped ceria abrasives on chemical mechanical polishingKim, Eungchul ; Lee, Jaewon ; Bae, Chulwoo ; Seok, Hyunho ; Kim, Hyeong-U ; Kim, TaesungPowder technology, 2022-01, Vol.397, p.117025, Article 117025 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
5 |
Material Type: Artigo
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A fundamental model proposed for material removal in chemical–mechanical polishingXin, J. ; Cai, W. ; Tichy, J.A.Wear, 2010-02, Vol.268 (5), p.837-844 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
6 |
Material Type: Artigo
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A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarizationSeo, JihoonJournal of materials research, 2021-01, Vol.36 (1), p.235-257 [Periódico revisado por pares]Cham: Springer International PublishingTexto completo disponível |
7 |
Material Type: Artigo
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Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2Wang, Wantang ; Zhang, Baoguo ; Shi, Yunhui ; Ma, Tengda ; Zhou, Jiakai ; Wang, Ru ; Wang, Hanxiao ; Zeng, NengyuanJournal of materials processing technology, 2021-09, Vol.295, p.117150, Article 117150 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
8 |
Material Type: Artigo
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Study on high efficient sapphire wafer processing by coupling SG-mechanical polishing and GLA-CMPXu, Yongchao ; Lu, Jing ; Xu, Xipeng ; Chen, Chao-Chang A. ; Lin, YujingInternational journal of machine tools & manufacture, 2018-08, Vol.130-131, p.12-19 [Periódico revisado por pares]Elmsford: Elsevier LtdTexto completo disponível |
9 |
Material Type: Artigo
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Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafersZhou, Yan ; Pan, Guoshun ; Shi, Xiaolei ; Zhang, Suman ; Gong, Hua ; Luo, GuihaiTribology international, 2015-07, Vol.87, p.145-150 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
10 |
Material Type: Artigo
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Improvement of oxide removal rate in chemical mechanical polishing by forming oxygen vacancy in ceria abrasives via ultraviolet irradiationKim, Eungchul ; Hong, Jiah ; Hong, Seokjun ; Kanade, Chaitanya ; Seok, Hyunho ; Kim, Hyeong-U ; Kim, TaesungMaterials chemistry and physics, 2021-11, Vol.273, p.124967, Article 124967 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |