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Preparation of irregular silica nano-abrasives for the chemical mechanical polishing behaviour on sapphire substrates
Preparation of irregular silica nano-abrasives for the chemical mechanical polishing behaviour on sapphire substrates
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Preparation of irregular silica nano-abrasives for the chemical mechanical polishing behaviour on sapphire substrates

Dong, Yue ; Lei, Hong ; Liu, Wenqing

Micro & nano letters, 2019-11, Vol.14 (13), p.1328-1333 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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2
A CNN Based CMP Planarization Model Considering LDE Effect
A CNN Based CMP Planarization Model Considering LDE Effect
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A CNN Based CMP Planarization Model Considering LDE Effect

Bao, Han ; Chen, Lan

IEEE transactions on components, packaging, and manufacturing technology (2011), 2020-04, Vol.10 (4), p.1-1 [Periódico revisado por pares]

Piscataway: IEEE

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3
Preliminary Study on Fluidized Bed Chemical Mechanical Polishing (FB-CMP) Process for Stainless Steel 304 (SS304)
Preliminary Study on Fluidized Bed Chemical Mechanical Polishing (FB-CMP) Process for Stainless Steel 304 (SS304)
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Preliminary Study on Fluidized Bed Chemical Mechanical Polishing (FB-CMP) Process for Stainless Steel 304 (SS304)

Kim, Taekyoung ; Lee, Hyunseop

Micromachines (Basel), 2020-07, Vol.11 (7), p.705 [Periódico revisado por pares]

Basel: MDPI AG

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4
Effects of trivalent lanthanide (La and Nd) doped ceria abrasives on chemical mechanical polishing
Effects of trivalent lanthanide (La and Nd) doped ceria abrasives on chemical mechanical polishing
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Effects of trivalent lanthanide (La and Nd) doped ceria abrasives on chemical mechanical polishing

Kim, Eungchul ; Lee, Jaewon ; Bae, Chulwoo ; Seok, Hyunho ; Kim, Hyeong-U ; Kim, Taesung

Powder technology, 2022-01, Vol.397, p.117025, Article 117025 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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5
A fundamental model proposed for material removal in chemical–mechanical polishing
A fundamental model proposed for material removal in chemical–mechanical polishing
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A fundamental model proposed for material removal in chemical–mechanical polishing

Xin, J. ; Cai, W. ; Tichy, J.A.

Wear, 2010-02, Vol.268 (5), p.837-844 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization
A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization
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A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Seo, Jihoon

Journal of materials research, 2021-01, Vol.36 (1), p.235-257 [Periódico revisado por pares]

Cham: Springer International Publishing

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7
Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2
Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2
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Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Wang, Wantang ; Zhang, Baoguo ; Shi, Yunhui ; Ma, Tengda ; Zhou, Jiakai ; Wang, Ru ; Wang, Hanxiao ; Zeng, Nengyuan

Journal of materials processing technology, 2021-09, Vol.295, p.117150, Article 117150 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Study on high efficient sapphire wafer processing by coupling SG-mechanical polishing and GLA-CMP
Study on high efficient sapphire wafer processing by coupling SG-mechanical polishing and GLA-CMP
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Study on high efficient sapphire wafer processing by coupling SG-mechanical polishing and GLA-CMP

Xu, Yongchao ; Lu, Jing ; Xu, Xipeng ; Chen, Chao-Chang A. ; Lin, Yujing

International journal of machine tools & manufacture, 2018-08, Vol.130-131, p.12-19 [Periódico revisado por pares]

Elmsford: Elsevier Ltd

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9
Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers
Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers
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Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers

Zhou, Yan ; Pan, Guoshun ; Shi, Xiaolei ; Zhang, Suman ; Gong, Hua ; Luo, Guihai

Tribology international, 2015-07, Vol.87, p.145-150 [Periódico revisado por pares]

Elsevier Ltd

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10
Improvement of oxide removal rate in chemical mechanical polishing by forming oxygen vacancy in ceria abrasives via ultraviolet irradiation
Improvement of oxide removal rate in chemical mechanical polishing by forming oxygen vacancy in ceria abrasives via ultraviolet irradiation
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Improvement of oxide removal rate in chemical mechanical polishing by forming oxygen vacancy in ceria abrasives via ultraviolet irradiation

Kim, Eungchul ; Hong, Jiah ; Hong, Seokjun ; Kanade, Chaitanya ; Seok, Hyunho ; Kim, Hyeong-U ; Kim, Taesung

Materials chemistry and physics, 2021-11, Vol.273, p.124967, Article 124967 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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