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Material Type: Artigo
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0-10009 Regulation of FSHβ gene expression in LβT2 cellsYoko Yamada ; Kohji Miyazaki ; Hiroyuki Nakanishi ; Hideyuki YamamotoJournal of Pharmacological Sciences, 2004, Vol.94 (suppl.1), p.76-76 [Periódico revisado por pares]The Japanese Pharmacological SocietyTexto completo disponível |
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Material Type: Artigo
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0-10010 Effects of St. John's wort on [2H]5-HT uptake and [3H]paroxetine binding in mouse brainKazufumi Hirano ; Shizuo Yamada ; Ryohei Kimura ; Yumi Sugimoto ; Jun YamadaJournal of Pharmacological Sciences, 2004, Vol.94 (suppl.1), p.76-76 [Periódico revisado por pares]The Japanese Pharmacological SocietyTexto completo disponível |
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Material Type: Artigo
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0-10017 Expression of acetyicholine in archaeaTomoya Yamada ; Takeshi Fujii ; Tamotsu Kanai ; Taku Amo ; Tadayuki Imanaka ; Hiroshi Nishimasu ; Hirofumi Syoun ; Masahiro Kamekura ; Koichiro KawashimaJournal of Pharmacological Sciences, 2004, Vol.94 (suppl.1), p.78-78 [Periódico revisado por pares]The Japanese Pharmacological SocietyTexto completo disponível |
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Material Type: Artigo
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0-10018 Substance P functions as a modulator of corneal epithelial migration through activation of calmodulin-dependent protein kinase IINaoyuki yamada ; Ryoji Yanai ; Teruo Nishida ; Makoto InuiJournal of Pharmacological Sciences, 2004, Vol.94 (suppl.1), p.78-78 [Periódico revisado por pares]The Japanese Pharmacological SocietyTexto completo disponível |
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Material Type: Artigo
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0.12–0.54 MeV C60 ion impacts on a poly(methyl methacrylate) target: Characterization through emission properties of negative secondary ionsHirata, K. ; Yamada, K. ; Chiba, A. ; Hirano, Y. ; Narumi, K. ; Saitoh, Y.Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-12, Vol.460, p.161-164 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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Material Type: Artigo
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0.15 µm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory FabricationNakajima, Ken ; Yamashita, Hiroshi ; Kojima, Yoshikatsu ; Hirasawa, Satomi ; Tamura, Takao ; Yamada, Yasuhisa ; Tokunaga, Kenichi ; Ema, Takahiro ; Kondoh, Kenji ; Naka Onoda, Naka Onoda ; Hiroshi Nozue, Hiroshi NozueJapanese Journal of Applied Physics, 1997-12, Vol.36 (12S), p.7535 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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0.15-mu m buried-channel p-MOSFETs with ultrathin boron-dopedepitaxial Si layerOhguro, T ; Yamada, K ; Sugiyama, N ; Imai, S ; Usuda, K ; Yoshitomi, T ; Fiegna, C ; Ono, M ; Saito, M ; Momose, H S ; Katsumata, Y ; Iwai, HIEEE transactions on electron devices, 1998-03, Vol.45 (3), p.717-721 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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0.15-/spl mu/m buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layerOhguro, T. ; Yamada, K. ; Sugiyama, N. ; Imai, S. ; Usuda, K. ; Yoshitomi, T. ; Fiegna, C. ; Ono, M. ; Saito, M. ; Momose, H.S. ; Katsumata, Y. ; Iwai, H.IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.717-721 [Periódico revisado por pares]IEEETexto completo disponível |
9 |
Material Type: Artigo
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0.15-μm buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layerOhguro, T. ; Yamada, K. ; Sugiyama, N. ; Imai, S. ; Usuda, K. ; Yoshitomi, T. ; Fiegna, C. ; Ono, M. ; Saito, M. ; Momose, H.S. ; Katsumata, Y. ; Iwai, H.IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.717-721 [Periódico revisado por pares]Texto completo disponível |
10 |
Material Type: Artigo
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0.15 μm electron beam direct writing for Gbit dynamic random access memory fabricationNAKAJIMA, K ; YAMASHITA, H ; NOZUE, H ; KOJIMA, Y ; HIRASAWA, S ; TAMURA, T ; YAMADA, Y ; TOKUNAGA, K ; EMA, T ; KONDOH, K ; ONODA, NJapanese journal of applied physics, 1997-12, Vol.36 (12B), p.7535-7540 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |