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1
The improvement in heat transfer performance of single crystal silicon carbide with diamond film
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The improvement in heat transfer performance of single crystal silicon carbide with diamond film

Zhu, Yulong ; Chen, Yuanhao ; Gou, Li

Journal of crystal growth, 2024-03, Vol.630, p.127601, Article 127601 [Revista revisada por pares]

Elsevier B.V

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2
Characterization on the occurrence state of nitrogen getter Ti in HPHT grown synthetic diamond crystals
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Characterization on the occurrence state of nitrogen getter Ti in HPHT grown synthetic diamond crystals

Sun, Kaiyue ; Lu, Taijin ; He, Mingyue ; Song, Zhonghua ; Zhang, Jian ; Ke, Jie

Journal of crystal growth, 2023-11, Vol.622, p.127390, Article 127390 [Revista revisada por pares]

Elsevier B.V

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3
Analysis of the High-Pressure High-Temperature (HPHT) growth of single crystal diamond
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Analysis of the High-Pressure High-Temperature (HPHT) growth of single crystal diamond

Dossa, Scott S. ; Ponomarev, Ilya ; Feigelson, Boris N. ; Hainke, Marc ; Kranert, Christian ; Friedrich, Jochen ; Derby, Jeffrey J.

Journal of crystal growth, 2023-05, Vol.609 (C), p.127150, Article 127150 [Revista revisada por pares]

Netherlands: Elsevier B.V

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4
Effect of plasma modulation on the nucleation and crystal evolution of nanodiamond seeds during CVD diamond growth
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Effect of plasma modulation on the nucleation and crystal evolution of nanodiamond seeds during CVD diamond growth

Zheng, Senjie ; Wang, Qiang ; Guo, Kesheng ; Bai, Jie ; Yang, Zhenhuai ; Yu, Hailing ; Liu, Hong ; Wei, Hong ; Zhu, Jingming ; Hu, Qiang

Journal of crystal growth, 2024-02, Vol.627, p.127538, Article 127538 [Revista revisada por pares]

Elsevier B.V

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5
Effects of B-NiS co-doping on diamonds growing along {111}-orientation under high pressure and high temperature
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Effects of B-NiS co-doping on diamonds growing along {111}-orientation under high pressure and high temperature

Chen, Jiaxi ; Li, Shangsheng ; Hu, Qiang ; You, Yue ; Hu, Meihua ; Su, Taichao ; Wang, Mengzhao ; Zhou, Xubiao ; Huang, Guofeng ; Li, Zhanchang ; Li, Yong ; Xiao, Hongyu

Journal of crystal growth, 2023-09, Vol.618, p.127302, Article 127302 [Revista revisada por pares]

Elsevier B.V

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6
One-step growth of a nearly 2 mm thick CVD single crystal diamond with an enlarged surface by optimizing the substrate holder structure
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One-step growth of a nearly 2 mm thick CVD single crystal diamond with an enlarged surface by optimizing the substrate holder structure

Feng, Mengyang ; Jin, Peng ; Meng, Xianquan ; Xu, Pengfei ; Wu, Ju ; Wang, Zhanguo

Journal of crystal growth, 2023-02, Vol.603, p.127011, Article 127011 [Revista revisada por pares]

Elsevier B.V

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7
Analysis of the correlation between in-situ and ex-situ observations of the initial stages of growth of heteroepitaxial diamond on Ir(001)/MgO(001)
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Analysis of the correlation between in-situ and ex-situ observations of the initial stages of growth of heteroepitaxial diamond on Ir(001)/MgO(001)

Kimura, Yutaka ; Oshima, Ryuji ; Sawabe, Atsuhito ; Aida, Hideo

Journal of crystal growth, 2022-10, Vol.595, p.126807, Article 126807 [Revista revisada por pares]

Elsevier B.V

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8
Estimation of hole mobility in hydrogen-terminated diamond MOSFET with high-k stacked gate dielectrics
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Estimation of hole mobility in hydrogen-terminated diamond MOSFET with high-k stacked gate dielectrics

Li, Yao ; Wang, Xi ; Pu, Hongbin

Journal of crystal growth, 2023-02, Vol.603, p.127010, Article 127010 [Revista revisada por pares]

Elsevier B.V

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9
Single crystal diamond particles formed by the reaction of carbon black and solid alcohol under high-pressure and high-temperature
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Single crystal diamond particles formed by the reaction of carbon black and solid alcohol under high-pressure and high-temperature

Oshima, Ryuji ; Iizuka, Kanji ; Ya. Vul, Alexander ; Shakhov, Fedor M.

Journal of crystal growth, 2022-06, Vol.587, p.126646, Article 126646 [Revista revisada por pares]

Amsterdam: Elsevier B.V

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10
Virtues of Ir(100) substrate on diamond epitaxial growth: First-principle calculation and XPS study
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Virtues of Ir(100) substrate on diamond epitaxial growth: First-principle calculation and XPS study

Wang, Yang ; Wang, Weihua ; Shu, Guoyang ; Fang, Shishu ; Dai, Bing ; Zhu, Jiaqi

Journal of crystal growth, 2021-04, Vol.560-561, p.126047, Article 126047 [Revista revisada por pares]

Amsterdam: Elsevier B.V

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