Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artículo
|
![]() |
The improvement in heat transfer performance of single crystal silicon carbide with diamond filmZhu, Yulong ; Chen, Yuanhao ; Gou, LiJournal of crystal growth, 2024-03, Vol.630, p.127601, Article 127601 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
2 |
Material Type: Artículo
|
![]() |
Characterization on the occurrence state of nitrogen getter Ti in HPHT grown synthetic diamond crystalsSun, Kaiyue ; Lu, Taijin ; He, Mingyue ; Song, Zhonghua ; Zhang, Jian ; Ke, JieJournal of crystal growth, 2023-11, Vol.622, p.127390, Article 127390 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
3 |
Material Type: Artículo
|
![]() |
Analysis of the High-Pressure High-Temperature (HPHT) growth of single crystal diamondDossa, Scott S. ; Ponomarev, Ilya ; Feigelson, Boris N. ; Hainke, Marc ; Kranert, Christian ; Friedrich, Jochen ; Derby, Jeffrey J.Journal of crystal growth, 2023-05, Vol.609 (C), p.127150, Article 127150 [Revista revisada por pares]Netherlands: Elsevier B.VTexto completo disponible |
4 |
Material Type: Artículo
|
![]() |
Effect of plasma modulation on the nucleation and crystal evolution of nanodiamond seeds during CVD diamond growthZheng, Senjie ; Wang, Qiang ; Guo, Kesheng ; Bai, Jie ; Yang, Zhenhuai ; Yu, Hailing ; Liu, Hong ; Wei, Hong ; Zhu, Jingming ; Hu, QiangJournal of crystal growth, 2024-02, Vol.627, p.127538, Article 127538 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
5 |
Material Type: Artículo
|
![]() |
Effects of B-NiS co-doping on diamonds growing along {111}-orientation under high pressure and high temperatureChen, Jiaxi ; Li, Shangsheng ; Hu, Qiang ; You, Yue ; Hu, Meihua ; Su, Taichao ; Wang, Mengzhao ; Zhou, Xubiao ; Huang, Guofeng ; Li, Zhanchang ; Li, Yong ; Xiao, HongyuJournal of crystal growth, 2023-09, Vol.618, p.127302, Article 127302 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
6 |
Material Type: Artículo
|
![]() |
One-step growth of a nearly 2 mm thick CVD single crystal diamond with an enlarged surface by optimizing the substrate holder structureFeng, Mengyang ; Jin, Peng ; Meng, Xianquan ; Xu, Pengfei ; Wu, Ju ; Wang, ZhanguoJournal of crystal growth, 2023-02, Vol.603, p.127011, Article 127011 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
7 |
Material Type: Artículo
|
![]() |
Analysis of the correlation between in-situ and ex-situ observations of the initial stages of growth of heteroepitaxial diamond on Ir(001)/MgO(001)Kimura, Yutaka ; Oshima, Ryuji ; Sawabe, Atsuhito ; Aida, HideoJournal of crystal growth, 2022-10, Vol.595, p.126807, Article 126807 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
8 |
Material Type: Artículo
|
![]() |
Estimation of hole mobility in hydrogen-terminated diamond MOSFET with high-k stacked gate dielectricsLi, Yao ; Wang, Xi ; Pu, HongbinJournal of crystal growth, 2023-02, Vol.603, p.127010, Article 127010 [Revista revisada por pares]Elsevier B.VTexto completo disponible |
9 |
Material Type: Artículo
|
![]() |
Single crystal diamond particles formed by the reaction of carbon black and solid alcohol under high-pressure and high-temperatureOshima, Ryuji ; Iizuka, Kanji ; Ya. Vul, Alexander ; Shakhov, Fedor M.Journal of crystal growth, 2022-06, Vol.587, p.126646, Article 126646 [Revista revisada por pares]Amsterdam: Elsevier B.VTexto completo disponible |
10 |
Material Type: Artículo
|
![]() |
Virtues of Ir(100) substrate on diamond epitaxial growth: First-principle calculation and XPS studyWang, Yang ; Wang, Weihua ; Shu, Guoyang ; Fang, Shishu ; Dai, Bing ; Zhu, JiaqiJournal of crystal growth, 2021-04, Vol.560-561, p.126047, Article 126047 [Revista revisada por pares]Amsterdam: Elsevier B.VTexto completo disponible |