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1
Analog circuit design using graded-channel SOI NMOSFETs
Analog circuit design using graded-channel SOI NMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Analog circuit design using graded-channel SOI NMOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; Symposium on Integrated Circuits and Systems Design (14. 2001 Campinas)

Proceedings Piscataway : IEEE, 2001

Piscataway IEEE 2001

Item não circula. Consulte sua biblioteca.(Acessar)

2
Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET
Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000: proceedings Manaus : SBMicro/UA/UFGRS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

3
The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics
The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics

Marcelo Antonio Pavanello João Antonio Martino 1959-; Vincent Dessard; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (9. 1999 Washington)

Electrochemical Society Proceedings Pennington v. 99-3, p. 293-298, 1999

Pennington 1999

Item não circula. Consulte sua biblioteca.(Acessar)

4
Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures
Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures

Marcello Bellodi Benjamin Iniguez; Cristine Raynaud; Denis Flandre; João Antonio Martino 1959-; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000: proceedings Manaus : SBMicro/UA/UFGRS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

5
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

6
Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs
Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs
Material Type:
Livro 		Adicionar ao Meu Espaço

Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

7
Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C
Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C

Marcello Bellodi Benjamin Iniguez; Denis Flandre; João Antonio Martino 1959-; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000 : proceedings Manaus : SBMicro/UA/UFRGS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

8
Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications
Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications

Marcello Bellodi Benjamin Iniguez; Denis Flandre; João Antonio Martino 1959-; International Symposium on Silicon-on-Insulator Technology and Devices (10. 2001 Washington, DC)

Proceedings Pennington : The Electrochemical Society, 2001

Pennington The Electrochemical Society 2001

Item não circula. Consulte sua biblioteca.(Acessar)

9
High performance current mirrors using graded-channel SOI MOSFETs
High performance current mirrors using graded-channel SOI MOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

High performance current mirrors using graded-channel SOI MOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (10. 2001 Washington, DC)

Proceedings Pennington : The Electrochemical Society, 2001

Pennington The Electrochemical Society 2001

Item não circula. Consulte sua biblioteca.(Acessar)

10
Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model
Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model

Marcello Bellodi João Antonio Martino 1959-; Denis Flandre; Conference of the Brazilian Microelectronics Society (11. 1996 Águas de Lindóia, SP)

Proceedings São Paulo : Sbmicro, 1996

São Paulo Sbmicro 1996

Item não circula. Consulte sua biblioteca.(Acessar)

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