Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: magazinearticle
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0:00 to goCartwright, GarySports illustrated, 1995-10, Vol.83 (19), p.72New York: Time, IncTexto completo disponível |
2 |
Material Type: Artigo
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0.02-wavelengths-thick transmission-type designer wave plate with high efficiencyXu, Peng ; Jiang, Wei Xiang ; Cai, Xiao ; Wang, Zheng Xing ; Cui, Tie JunJournal of physics. D, Applied physics, 2019-09, Vol.52 (37), p.375105 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
3 |
Material Type: Artigo
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0.13-micron design rule from 193nm resist reportedElectronic News, 1997-04, Vol.43 (2164), p.83New York: Reed Business Information, a division of Reed Elsevier, IncTexto completo disponível |
4 |
Material Type: Ata de Congresso
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0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masksChen, Yung-Tin ; Lin, Chia-Hui ; Lin, Hua Tai ; Hsieh, Hung-Chang ; Yu, Shinn Sheng ; Yen, AnthonySPIE 2000Texto completo disponível |
5 |
Material Type: Ata de Congresso
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0.18μm CMOS and beyondEaglesham, D. J. Irwin, Mary JaneProceedings of the 36th annual ACM/IEEE Design Automation Conference, 1999, p.703-708New York, NY, USA: ACMTexto completo disponível |
6 |
Material Type: Artigo
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0.2-Tesla magnetic resonance imaging of internal lesions of the knee joint: a prospective arthroscopically controlled clinical studyRiel, K A ; Reinisch, M ; Kersting-Sommerhoff, B ; Hof, N ; Merl, TKnee surgery, sports traumatology, arthroscopy : official journal of the ESSKA, 1999-01, Vol.7 (1), p.37-41 [Periódico revisado por pares]Germany: Springer Nature B.VTexto completo disponível |
7 |
Material Type: Artigo
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0.25 µm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100Kashio, N ; Kurishima, K ; Ida, M ; Matsuzaki, HElectronics letters, 2014-10, Vol.50 (22), p.1631 [Periódico revisado por pares]Stevenage: John Wiley & Sons, IncTexto completo disponível |
8 |
Material Type: Artigo
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0.3–3 GHz magneto-dielectric properties of nanostructured NiZnCo ferrite from hydrothermal processShen, Xiang ; Wang, Yanxin ; Yang, Xiang ; Lu, Liqiang ; Huang, LiangJournal of materials science. Materials in electronics, 2010-06, Vol.21 (6), p.630-634 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
9 |
Material Type: Ata de Congresso
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0.35-um i-line poly processing with a bottom antireflective coating (BARC)Krisa, William L ; Garza, Cesar M ; McKee, J. ASPIE 1995Texto completo disponível |
10 |
Material Type: Artigo
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0.43 THz emission from high-Tc superconducting emitters optimized at 77 KMinami, H ; Watanabe, C ; Kashiwagi, T ; Yamamoto, T ; Kadowaki, K ; Klemm, R AJournal of physics. Condensed matter, 2015-12, Vol.28 (2) [Periódico revisado por pares]IOP PublishingTexto completo disponível |