Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effectsENOKI, T ; TOMIZAWA, M ; UMEDA, Y ; ISHII, YJapanese Journal of Applied Physics, 1994, Vol.33 (1B), p.798-803 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
2 |
Material Type: Ata de Congresso
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0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVDEnoki, T. ; Ito, H. ; Ikuta, K. ; Ishii, Y.Seventh International Conference on Indium Phosphide and Related Materials, 1995, p.81-84IEEETexto completo disponível |
3 |
Material Type: Artigo
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0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVDEnoki, Takatomo ; Ito, Hiroshi ; Ikuta, Kenji ; Umeda, Yohtaro ; Ishii, YasunobuMicrowave and optical technology letters, 1996-02, Vol.11 (3), p.135-139 [Periódico revisado por pares]New York: Wiley Subscription Services, Inc., A Wiley CompanyTexto completo disponível |
4 |
Material Type: Artigo
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024 Accelerated Epithelization of STSG Donor Wounds by Cultured Cellular Sheet Composed of Mixture of Keratinocytes and FibroblastsYoshihiro, Takami ; Hideharu, Tanaka ; Takako, Wada ; Mika, Enoki ; Ryo, Yamaguchi ; Hiroshi, Miyauchi ; Hideaki, Goto ; Takeo, Koizumi ; Matsuda, Taketo ; Shimazaki, Syuuji ; Ken, OgoWound repair and regeneration, 2004-01, Vol.12 (1), p.A11-A11 [Periódico revisado por pares]Oxford, UK; Malden, USA: Blackwell Science IncTexto completo disponível |
5 |
Material Type: Artigo
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0.25-\mbox{$\mu$m}-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge StructureKashio, Norihide ; Kurishima, Kenji ; Fukai, Yoshino K ; Ida, Minoru ; Yamahata, ShojiJpn J Appl Phys, 2010-04, Vol.49 (4), p.04DF02-04DF02-5 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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0.3- mu m advanced SAINT FET's having asymmetric n/sup +/-layers for ultra-high-frequency GaAs MMIC'sEnoki, T. ; Yamasaki, K. ; Osafune, K. ; Ohwada, K.IEEE transactions on electron devices, 1988-01, Vol.35 (1), p.18-24 [Periódico revisado por pares]IEEETexto completo disponível |
7 |
Material Type: Artigo
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0.3- mu m advanced SAINT FET's having asymmetric n super(+)-layers for ultra-high-frequency GaAs MMIC'sEnoki, T ; Yamasaki, K ; Osafune, K ; Ohwada, KIEEE transactions on electron devices, 1988-01, Vol.ED-35 (1), p.18-24 [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Ata de Congresso
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0.4 V, 5.6 mW InP HEMT V-band Low-Noise Amplifier MMICNishikawa, K. ; Enoki, T. ; Sugitani, S. ; Toyoda, I.2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.810-813IEEETexto completo disponível |
9 |
Material Type: Artigo
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041 Increased Interleukin-36γ in keratinocytes may induce epithelial-mesenchymal transition in patients with systemic sclerosisEnoki, A.A. ; Ototake, Y. ; Suzuki, M. ; Watanabe, Y. ; Asami, M. ; Ikeda, N. ; Takamura, N. ; Kanaoka, M. ; Watanabe, T. ; Yamaguchi, Y.Journal of investigative dermatology, 2022-12, Vol.142 (12), p.S187-S187 [Periódico revisado por pares]Elsevier IncTexto completo disponível |
10 |
Material Type: Artigo
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09:32 AM: Effect of Maxillary Expansion on Nose and Air ResistanceValera, Fabiana ; Demarco, Ricardo ; Anselmo-Lima, Wilma T. ; Enoki, Carla ; Lessa, Fernanda ; Elias, Ana Maria ; Matsumoto, MarianOtolaryngology-head and neck surgery, 2006-08, Vol.135 (2), p.P182-P182 [Periódico revisado por pares]Los Angeles, CA: Mosby, IncTexto completo disponível |